Related papers: Gate-dependent non-linear Hall effect at room temp…
Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed…
The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling…
In a system with inversion symmetry broken, a second-order nonlinear Hall effect can survive even in the presence of time-reversal symmetry. In this work, we show that a giant nonlinear Hall effect can exist in twisted bilayer WTe2 system.…
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface…
The nonlinear Hall effect (NLHE) connects crystalline symmetry to quantum geometry, offering a probe of band topology beyond linear transport. While most studies have focused on the Berry curvature dipole in low-symmetry crystals,…
We report experimental observation of the Planar Hall effect (PHE) in a type-II Dirac semimetal PtTe$_2$. This unusual Hall effect is not expected in nonmagnetc materials such as PtTe$_2$, and has been observed previously mostly in magnetic…
The appearance of a Hall conductance necessarily requires breaking of time-reversal symmetry, either by an external magnetic field or by the internal magnetization of a material. However, as a second response, Hall dissipationless…
The nonlinear Hall effect (NLHE), an emergent response in systems with broken inversion symmetry, provides a powerful tool for probing topological transport properties. In this context, we investigate copper-substituted lead apatite…
A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these…
The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521…
A mechanism for phonon Hall effect (PHE) in non-magnetic insulators under an external magnetic field is theoretically studied. PHE is known in (para)magnetic compounds, where the magnetic moments and spin-orbit interaction play an essential…
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency…
The nonlinear Hall effect (NLHE), as an important probe to reveal the symmetry breaking in topological properties of materials, opens up a new dimension for exploring the energy band structure and electron transport mechanism of quantum…
The layer Hall effect is an intriguing phenomenon observed in magnetic topological layered materials, where the Hall response arises from the opposite deflection of electrons on top and bottom layers. To realize layer Hall effect,…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends…
Recently, signatures of nonlinear Hall effects induced by Berry-curvature dipoles have been found in atomically thin 1T'/Td-WTe$_2$. In this work, we show that in strained polar transition-metal dichalcogenides(TMDs) with 2H-structures,…
Hot spot of Berry curvature is usually found at Bloch band anti-crossings, where the Hall effect due to the Berry phase can be most pronounced. With small gaps there, the adiabatic limit for the existing formulations of Hall current can be…
We identify a sizable non-linear anomalous Hall effect in the electrical response of spin-3/2 heavy holes in zincblende semiconductor nanostructures. The response is driven by a quadrupole interaction with the electric field enabled by…