Related papers: Universal radiation tolerant semiconductor
Defects in two-dimensional (2D) semiconductors play a decisive role in determining their electronic, optical, catalytic and quantum properties. Understanding how defect energy levels respond to variations in layer thickness is essential for…
We consider holographic superconductors in a broad class of massive gravity backgrounds. These theories provide a holographic description of a superconductor with broken translational symmetry. Such models exhibit a rich phase structure:…
Short-range lattice superstructures have been studied with high-energy x-ray diffuse scattering in underdoped, optimally doped, and overdoped $\rm (Y,Ca)Ba_2 Cu_3 O_{6+x}$. A new four-unit-cell superstructure was observed in compounds with…
The ultrawide-bandgap semiconductor $\beta$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality…
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has…
The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to…
Atomic-scale ferroelectric thin films hold great promise for high-density, low-power applications but face stability and voltage scaling challenges at extreme thinness. Here, we demonstrate ferroelectricity in single-crystalline…
Hyperbolic metamaterials show exceptional optical properties, such as near-perfect broadband absorption, due to their geometrically-engineered optical anisotropy. Many of their proposed applications, such as thermophotovoltaics or radiative…
The suitability of Ti as a band gap modifier for $\alpha$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural {\alpha}-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a…
A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
The present work aims at investigating the defect accumulation and recovery dynamics in the inherently anisotropic $\beta$-Ga$_2$O$_3$ lattice. A systematic Rutherford Backscattering Spectrometry in Channelling mode (RBS/C) analysis of…
Growing attention has been drawn in the past years to the \alpha-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (\sqrt3 x \sqrt3)R30° one. On the basis…
The linear-$T$ resistivity is one of the characteristic and universal properties of strange metals. There have been many progress in understanding it from holographic perspective (gauge/gravity duality). In most holographic models, the…
Superconductivity is observed in a new nontoxic cuprate system Ga-Ba-Ca-Cu-O, with Tc = 82K for GaBa2Ca5Cu6O14+{\delta} (Ga-1256) and Tc = 116K probably for GaBa2Ca3Cu4O10+{\delta} (Ga-1234) or GaBa2Ca2Cu3O8+{\delta} (Ga-1223),…
Possibilities to search for double beta decay of alpha/beta unstable nuclei, many of which have higher energy release than "conventional" (beta stable) double beta decay candidates, are discussed. First experimental half-life limits on…
$\beta$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important…
We investigate a bi-layer scheme for circularly polarized infrared thermal radiation. Our approach takes advantage of the strong anisotropy of low-symmetry materials such as $\beta$-Ga$_2$O$_3$ and $\alpha$-MoO$_3$. We numerically report…
The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O$_2^{2-}$ peroxide defects. The valence band tail states are at least partly characterized by the O-O…
While insensitive to weak non magnetic disorder, an s-wave superconductor can be driven insulating by strong disorder. Using a scheme that captures the correct ground state, and fully retains thermal amplitude and phase fluctuations, we…