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Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and…

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a…

Mesoscale and Nanoscale Physics · Physics 2010-10-12 G. De Simoni , A. Singha , M. Gibertini , B. Karmakar , M. Polini , V. Piazza , L. N. Pfeiffer , K. W. West , F. Beltram , V. Pellegrini

We use recent theoretical advances to develop a new functional form for interatomic forces in bulk silicon. The theoretical results underlying the model include a novel analysis of elastic properties for the diamond and graphitic structures…

Materials Science · Physics 2016-08-31 Martin Z. Bazant , Efthimios Kaxiras , J. F. Justo

The structure and electrical properties of a two-dimensional (2D) sheet of silicon on a graphene substrate are studied using first-principles calculations. A new corrugated rectangular structure of silicon is proposed to be the most…

Mesoscale and Nanoscale Physics · Physics 2014-01-09 Ruiping Zhou , Lok C. Lew Yan Voon , Yan Zhuang

We study in-plane lateral heterostructures of commensurate transition-metal dichalcogenides, such as MoS$_{2}$-WS$_{2}$ and MoSe$_{2}$-WSe$_{2}$, and find interfacial and edge states that are highly localized to these regions of the…

Mesoscale and Nanoscale Physics · Physics 2019-01-04 Oscar Ávalos-Ovando , Diego Mastrogiuseppe , Sergio E. Ulloa

Inspired by the unique properties of graphene, the focus in the literature is now on investigations of various two-dimensional (2D) materials with the aim to explore their properties for future applications. The group IV analogues of…

Materials Science · Physics 2020-03-24 J. Shah , H. M. Sohail , R. I. G. Uhrberg , W. Wang

Silicon-based two-dimensional (2D) materials, including well-known silicene, have garnered considerable attention due to their potential in advanced electronic and optoelectronic applications. Here, we introduce a novel 2D silicon variant,…

Materials Science · Physics 2023-11-02 K. A. L. Lima , L. A. Ribeiro

Si and its oxides have been extensively explored in theoretical research due to their technological and industrial importance. Simultaneously describing interatomic interactions within both Si and SiO$_2$ without the use of \textit{ab…

Materials Science · Physics 2024-07-29 Karim Zongo , Hao Sun , Claudiane Ouellet-Plamondon , Laurent Karim Béland

Silicene, an analogue of graphene, was so far predicted to be the only two-dimensional silicon (2D-Si) with massless Dirac fermions. Here we predict a brand new 2D-Si Dirac semimetal, which we name siliconeet [silik'ni:t]. Unexpectedly, it…

Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or…

Applied Physics · Physics 2021-01-01 Junyang Tan , Shisheng Li , Bilu Liu1 , Hui-Ming Cheng

Titanium MXenes are two-dimensional inorganic structures composed of titanium and carbon or nitrogen elements, with distinctive electronic, thermal and mechanical properties. Despite the extensive experimental investigation, there is a…

Materials Science · Physics 2025-12-30 Luis F. V. Thomazini , Alexandre F. Fonseca

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible…

Materials Science · Physics 2016-01-18 Junwen Li , Nikhil V. Medhekar , Vivek B. Shenoy

Silicene is an intriguing silicon allotrope with a honeycomb lattice structure similar to graphene with slightly buckled geometry. Molybdenum disulfide (MoS2), on the other hand, is a significant 2D transition metal dichalcogenide that has…

Materials Science · Physics 2024-06-18 Bishwajit Kar , Plabon Paul , Md Arshadur Rahman , Mohammad Jane Alam Khan

Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that…

Mesoscale and Nanoscale Physics · Physics 2015-05-25 Jiagui Feng , Sean Wagner , Pengpeng Zhang

Silicene is the counterpart of graphene and its potential applications as a part of the current electronics, based in silicon, make it a very important system to study. We perform molecular dynamics simulations and analyze the structure of…

Materials Science · Physics 2012-04-13 M. R. Chavez-Castillo , M. A. Rodriguez-Meza , L. Meza-Montes

This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…

Transition metal dichalcogenides (TMDs) display a rich variety of instabilities such as spin and charge orders, Ising superconductivity and topological properties. Their physical properties can be controlled by doping in electric…

High-transmissivity all-dielectric metasurfaces have recently attracted attention towards the realization of ultra-compact optical devices and systems. Silicon based metasurfaces, in particular, are highly promising considering the…

Optics · Physics 2017-04-17 Krupali D. Donda , Ravi S. Hegde

Two-dimensional transition metal dichalcogenides (TMDs) exist in two polymorphs, referred to as $1T$ and $1H$, depending on the coordination sphere of the transition metal atom. The broken octahedral and trigonal prismatic symmetries lead…

Mesoscale and Nanoscale Physics · Physics 2018-10-03 Diego Pasquier , Oleg V. Yazyev

An anisotropic interlayer force field that describes the interlayer interactions in homogeneous and heterogeneous interfaces of group-VI transition metal dichalcogenides (MX2 where M = Mo, W and X = S, Se) is presented. The force field is…