Related papers: Manipulating solid-state spin concentration throug…
The review is devoted to the theory of collective and it local pinning effects in various disordered non-linear driven systems. Although the emphasis is put on charge and spin density waves and magnetic domain walls, the theory has also…
We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via conditional optically induced charge evolution even in the absence of any direct interaction between the spin and its environment. A…
Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices. In this letter we report on photoinduced modulation doping…
We investigate transport in several translationally invariant spin-1/2 chains in the limit of high temperatures. We concretely consider spin transport in the anisotropic Heisenberg chain, the pure Heisenberg chain within an alternating…
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide…
We theoretically investigate the spin dynamics of a heavy hole confined to an unstrained III-V semiconductor quantum dot and interacting with a narrowed nuclear-spin bath. We show that band hybridization leads to an exponential decay of…
The usefulness of solid-state spins in quantum technologies depends on how long they can remain in a coherent superposition of quantum states. This Colloquium discusses how first-principles simulations can predict spin dynamics for…
Realizing useful quantum operations with high fidelity is a two-task quantum control problem wherein decoherence is to be suppressed and desired unitary evolution is to be executed. The dynamical decoupling (DD) approach to decoherence…
Diamond defects are among the most promising qubits. Modelling their properties through accurate quantum mechanical simulations can further their development into robust units of information. We use the recently developed capped density…
The sensitivity of magnetic and electric field sensors based on nitrogen-vacancy (NV) center in diamond strongly depends on the available concentration of NV and their coherence properties. Achieving high coherence times simultaneously with…
Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between…
Solid-state spin defects, especially nuclear spins with potentially achievable long coherence times, are compelling candidates for quantum memories and sensors. However, their current performances are still limited by the decoherence due to…
Electron spins in solids constitute remarkable quantum sensors. Individual defect centers in diamond were used to detect individual nuclear spins with nanometer scale resolution, and ensemble magnetometers rival SQUID and vapor cell…
Spin crossover (SCO) complexes are highly promising candidates for a myriad of potential applications in room-temperature electronics; however, as it stands, establishing a clear connection between their spin-state switching and transport…
Levitated macroscopic particles exhibiting quantum mechanical effects are garnering increased attention as a means for precision sensing and testing quantum mechanics. Defects in diamond, such as the nitrogen-vacancy (NV) centre possess…
Detailed knowledge of the local environments of spin-defects in semiconductors, such as nitrogen vacancy (NV) centers in diamond or divacancies in silicon carbide, is crucial for optimizing control and entanglement protocols in quantum…
Building up a solid-state material from quantum dots (QD), which are often referred to as artificial atoms, offers the potential to create new materials with unprecedented macroscopic properties. The investigation of the electronic…
We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC).…
Optically active spin defects in van der Waals (vdW) materials have recently emerged as versatile quantum sensors, enabling applications from nanoscale magnetic field detection to the exploration of novel quantum phenomena in condensed…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…