Related papers: Second Quantization: Gating a Quantum Dot Through …
We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the…
Electrostatic force microscopy at cryogenic temperatures was used to probe the electrostatic interaction between a conductive atomic force microscopy tip and electronic charges trapped in an InAs quantum dot. Measurement of the…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
We theoretically study specific schemes for performing a fundamental two-qubit quantum gate via controlled atomic collisions by switching microscopic potentials. In particular we calculate the fidelity of a gate operation for a…
Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this…
Simplest models of two- and three-terminal Quantum Quantum Gates are suggested in form of a quantum ring with few one-dimensional quantum wires attached to it and several point-wise govering electrodes inside the ring which are charged by a…
We demonstrate coaxial atomic force microscope (AFM) tweezers that can trap and place small objects using dielectrophoresis (DEP). An attractive force is generated at the tip of a coaxial AFM probe by applying a radio frequency voltage…
We have used the mechanical motion of a carbon nanotube (CNT) as a probe of the average charge on a quantum dot. Variations of the resonance frequency and the quality factor are determined by the change in average charge on the quantum dot…
We present first-principles total-energy electronic-structure calculations that provide the microscopic mechanism of the Ag atom diffusion between the half unit cells (HUCs) on the Si(111)-(7x7) surface with and without the tip of the…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We propose a scalable neutral atom quantum computer with an on-demand interaction through a selective two-qubit gate operation. Atoms are trapped by a lattice of near field Fresnel diffraction lights so that each trap captures a single…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net…
We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which…
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a…