Related papers: A strain-controlled magnetostrictive pseudo spin v…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Spinmotive force induced by domain wall motion in perpendicularly magnetized nanowires is numerically demonstrated. We show that using nanowires with large magnetic anisotropy can lead to a high stability of spinmotive force under strong…
An isotropic medium, having magnetic sublevels, when subjected to a magnetic field or an electromagnetic field can induce anisotropy in the medium; and as a result the plane of polarization of the probe field can rotate. Therefore the…
Indirect magnetoelectric effect has been studied in magnetostrictive-film/substrate/piezoelectric-actuator heterostructures. Two different substrates have been employed: a flexible substrate (Young's modulus of 4 GPa) and a rigid one…
The successful commercialization of flexible spintronic devices requires a complete understanding of the impact of external strain on the structural, electronic, and magnetic properties of a system. The impact of bending-induced strain on…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
Ferromagnetic films with perpendicular magnetic anisotropy are of interest in spintronics and superconducting spintronics. Perpendicular magnetic anisotropy can be achieved in thin ferromagnetic multilayer structures, when the anisotropy is…
Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field -…
We present a method to measure the effective field contribution to spin-transfer-induced interactions between the magnetic layers in a trilayer nanostructure, which enables spin-current effects to be distinguished from the usual…
Precise control of magnetic domain formation at the nanoscale remains constrained by stochastic defect-mediated and unstable pinning, limiting scalability and reproducibility in spintronic architectures. Here we demonstrate that spatially…
It is a common perception that the transport of a spin current in polycrystalline metal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key…
Magnetic trilayers having large perpendicular magnetic anisotropy (PMA) and high spin-orbit torques (SOTs) efficiency are the key to fabricate nonvolatile magnetic memory and logic devices. In this work, PMA and SOTs are systematically…
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d…
In 3d-electron magnetic systems, the magnetic structures that transform each other by spin rotation have very close degenerate energies due to small spin-orbit coupling and can be easily controlled by chemical substitution and external…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin…
Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we…
Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5…
Magnetic switch with perpendicular magnetic anisotropy (PMA) is a promising method for controlling magnetization in several applications like magnetic tunnel junction and magnetic memory. However, incoherence happens during the switch…