Related papers: A strain-controlled magnetostrictive pseudo spin v…
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Whenever the elastic energy of a solid depends on magnetic field, there is a magnetostrictive response. Field-linear magnetostriction implies piezomagnetism and vice versa. Here, we show that Mn$_3$Sn, a non-collinear antiferromanget with…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Ultra-thin film of FeRh on insulator MgO substrate has been investigated usingab-initio electronic structure calculations. From this calculation, we have found the interesting effect of epitaxial strain on the magnetocrystalline anisotropy…
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 {\mu}m. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic…
We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
The dynamics of magnetic domain walls along ferromagnetic strips with spatially modulated perpendicular magnetic anisotropy is theoretically studied by means of micromagnetic simulations. Ferromagnetic layers with a periodic sawtooth…
Using micromagnetics we demonstrate that the r.f. field produced by a spin valve can be used to reverse the magnetization in a magnetic nanoparticle. The r.f. field is generated using a current that specifically excites a uniform spin wave…
We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a…
We have explored the electric field controlled magnetization in the nanodot CoFe2O4/SrRuO3/PMN-PT heterostructures. Ordered ferromagnetic CFO nanodots (~300 nm lateral dimension) are developed on the PMN-PT substrate (ferroelectric as well…
We theoretically study equilibrium and dynamic properties of nanosized magnetic skyrmions in thin magnetic films with broken inversion symmetry, where electric field couples to magnetization via spin-orbit coupling. Based on a…
We use nanometer-sized point contacts to a Co/Cu spin valve to study the giant magnetoresistance (GMR) of only a few Co domains. The measured data show strong device-to-device differences of the GMR curve, which we attribute to the absence…
Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon…
We introduce a minimal spin model for describing the magnetic properties of $\mathrm{CuCrO_2}$. Our Monte Carlo simulations of this model reveal a rich magnetic field induced phase diagram, which explains the measured field dependence of…
We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel…
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
Topological chiral antiferromagnets, such as Mn$_{3}$Sn, are emerging as promising materials for next-generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, we demonstrate…