Related papers: Pressure Sensor Chip with New Electrical Circuit f…
We report on the realization of a high sensitivity RF noise measurement scheme to study small current fluctuations of mesoscopic systems at milliKelvin temperatures. The setup relies on the combination of an interferometric ampli- fication…
The integration on a single chip of the sensitivity-relevant electronics of nuclear magnetic resonance (NMR) and electron spin resonance (ESR) spectrometers is a promising approach to improve the limit of detection, especially for samples…
In the development of any type of magnetic field sensor based on magnetic films, special consideration must be given to the magnetic layer component. The presented work investigates the use of flux closing magnetostrictive multilayers for…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We present a new spin-exchange relaxation-free vector magnetometer with suppressed 1/f probe noise, achieved by applying a small DC bias field and a comb of magnetic DC $\pi$ pulses along the pump direction. This results in a synchronous…
A temperature controlled 1 {\Omega}-10 k{\Omega} standard Resistors transportable setup was developed at National Institute of Metrological Research, (INRIM) for the calibration and adjustment of multifunction electrical instruments. The…
Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detection technology that can, in principle, provide significantly greater responsivity and improved noise performance than traditional charge coupled device (CCD)…
Degenerate parametric amplifiers (DPAs) exhibit the unique property of phase-sensitive gain and can be used to noiselessly amplify small signals or squeeze field fluctuations beneath the vacuum level. In the microwave domain, these…
We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped…
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…
Compact, high-precision inertial sensors are needed to isolate many modern physics experiments from disturbances caused by seismic motion. We present a novel inertial sensor whose mechanical oscillator fits on a standard one-inch diameter…
Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose…
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2-ZrO2 solid solution thin film has provided a new way to increase the…
A MEMS-based sensing device is used to measure the normal and tangential stress fields at the base of a rough elastomer film in contact with a smooth glass cylinder in steady sliding. This geometry allows for a direct comparison between the…
Engineering a layer of nitrogen-vacancy (NV) centers on the tip of a diamond anvil creates a multipurpose quantum sensors array for high pressure measurements, especially for probing magnetic and superconducting properties of materials.…
The ultra-low mass cylindrical drift chamber designed for the MEG II experiment is a challenging apparatus made of 1728 phi = 20 micron gold plated tungsten sense wires, 7680 phi = 40 micron and 2496 phi = 50 micron silver plated aluminum…
We present a scheme for on-chip optical transduction of strain and displacement of Graphene-based Nano-Electro-Mechanical Systems (NEMS). A detailed numerical study on the feasibility of three silicon-photonic integrated circuit…
75As-zero-field nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements are performed on CaFe2As2 under pressure. At P = 4.7 and 10.8 kbar, the temperature dependences of nuclear-spin-lattice relaxation rate…
The LEUTL FEL at the APS has achieved gain at 530 nm with peak beam current \~100 A. In an effort to push to 120 nm and beyond, we have designed and are commissioning a bunch compressor to increase the peak current to 600 A or more. The…
Pneumatic pressure cells with thin metallic spherical diaphragm of shallow spherical shell configuration linked with vibrating wire pickup or vibrating cantilever pickup were reported in the past. In order to enhance the sensitivity of the…