Related papers: Improper ferroelectricity in ultrathin hexagonal f…
Strain engineering provides the ability to control the ground states and associated phase transition in the epitaxial films. However, the systematic study of intrinsic characters and their strain dependency in transition-metal nitrides…
We present temperature-dependent scanning tunneling spectroscopy measurements on $La_{1-x}Ca_{x}MO_{3}$ ($x\sim0.33$) films with different degrees of biaxial strain. A depletion in normalized conductance around the Fermi level is observed…
Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the…
We report on the lattice evolution of BiFeO3 as function of temperature using far infrared emissivity, reflectivity, and X-ray absorption local structure. A power law fit to the lowest frequency soft phonon in the magnetic ordered phase…
Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering…
By realizing in thin films a tensile stress state, superconductivity of 13 K was introduced into FeTe, an non-superconducting parent compound of the iron pnictides and chalcogenides, with transition temperature higher than that of its…
Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that…
Ferromagnetic semiconductors discovered in two-dimensional (2D) materials open an avenue for highly integrated and multifunctional spintronics. The Curie temperature (TC) of existed 2D ferromagnetic semiconductors is extremely low and the…
Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control…
We study the critical behavior of magnetic thin films as a function of the film thickness. We use the ferromagnetic Ising model with the high-resolution multiple histogram Monte Carlo (MC) simulation. We show that though the 2D behavior…
The temperature-driven reorientation transition which, up to now, has been studied by use of Heisenberg-type models only, is investigated within an itinerant-electron model. We consider the Hubbard model for a thin fcc(100) film together…
The coupling between ferroelectric and magnetic orders in multiferroic materials and the nature of magnetoelectric (ME) effects are enduring experimental challenges. In this work, we have studied the response of magnetization to…
The reorientation transition of the magnetization of ferromagnetic films is studied on a microscopic basis within Heisenberg spin models. Analytic expressions for the temperature dependent anisotropy are derived from which it is seen that…
The recent discovery of transient negative capacitance has sparked an intense debate on the role of homogeneous and inhomogeneous mechanisms in polarizations switching. In this work, we report observation of transient negative capacitance…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the…
Experimental efforts to stabilize ferromagnetism in ultrathin films of transition metal oxides have so far failed, despite expectations based on density functional theory (DFT) and DFT+U. Here, we investigate one of the most promising…
Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent…
The temperature dependence of the electrical resistivity of the heterostructures consisting of single crystalline LaMnO$_3$ samples with different crystallographic orientations covered by the epitaxial ferroelectric…
Since its discovery, ferroelectric hafnia has been extensively studied due to its CMOS-compatibility and ability to remain polarized at sub-10 nm thicknesses. The ferroelectric behaviour is generally attributed to a polar orthorhombic…