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Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…

Mesoscale and Nanoscale Physics · Physics 2015-06-22 Zhenghe Jin , Xiaodong Li , Jeffrey Thomas Mullen , Ki Wook Kim

The collective charge density wave (CDW) conduction is modulated by a transverse single-particle current in a transistor-like device. Nonequilibrium conditions in this geometry lead to an exponential reduction of the depinning threshold,…

Strongly Correlated Electrons · Physics 2009-10-31 N. Markovic , M. A. H. Dohmen , H. S. J. van der Zant

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…

Materials Science · Physics 2017-01-10 Zhihao Yu , Zhun-Yong Ong , Songlin Li , Jian-Bin Xu , Gang Zhang , Yong-Wei Zhang , Yi Shi , Xinran Wang

The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties…

Materials Science · Physics 2018-06-06 P. Shahi , D. J. Singh , J. P. Sun , L. X. Zhao , G. F. Chen , J. -Q. Yan , D. G. Mandrus , J. -G. Cheng

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Materials Science · Physics 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This…

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the…

The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals…

Mesoscale and Nanoscale Physics · Physics 2022-12-16 N. N. Orlova , A. V. Timonina , N. N. Kolesnikov , E. V. Deviatov

We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction,…

Applied Physics · Physics 2020-08-25 A. Di Bartolomeo , A. Pelella , F. Urban , A. Grillo , L. Iemmo , M. Passacantando , X. Liu , F. Giubileo

Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…

We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi$_2$Se$_3$ and PtSe$_2$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers.…

Mesoscale and Nanoscale Physics · Physics 2020-12-15 Shahid Sattar , J. Andreas Larsson

Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By…

Materials Science · Physics 2017-01-16 Yuanfeng Xu , Zeyu Ning , Hao Zhang , Gang Ni , Hezhu Shao , Bo Peng , Xiangchao Zhang , Xiaoying He , Yongyuan Zhu , Heyuan Zhu

Two-band electronic structures with a valence and a conduction band separated by a tunable energy gap and with pairing of electrons in different channels can be relevant to investigate the properties of two-dimensional multiband…

Superconductivity · Physics 2023-05-04 Giovanni Midei , Andrea Perali

The interplay between charge transfer and electronic disorder in transition-metal dichalcogenide multilayers gives rise to superconductive coupling driven by proximity enhancement, tunneling and superconducting fluctuations, of a yet…

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the…

Materials Science · Physics 2022-07-27 Yonglan Hu , Tie Yang , Dengfeng Li , Guangqian Ding , Chaochao Dun , Dandan Wu , Xiaotian Wang

Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here,…

Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic…

Van der Waals (vdW) heterostructures combining two-dimensional (2D) ferromagnets and semiconducting transition-metal dichalcogenides (TMDCs) offer highly promising opportunities for tailoring 2D magnetism through interfacial proximity…

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…

Superconductivity · Physics 2016-08-31 Xiaoxiang Xi , Helmuth Berger , László Forró , Jie Shan , Kin Fai Mak