Related papers: Quantum Transport in Graphene Using Surface Acoust…
Enhancement of thermal conductivity via surface electromagnetic waves (SEWs) supported in nanostructures has recently drawn attention as a remedy for issues raised due to the reduction of thermal conductivity in nanoscale confinement. Among…
Graphene quantum dots are promising candidates for qubits due to weak spin-orbit and hyperfine interactions. The hyperfine interaction, controllable via isotopic purification, could be the key to further improving the coherence. Here, we…
Vertical integration of dissimilar layered materials in a so-called van der Waals (vdW) heterostructure (HS) has emerged as a useful tool to engineer band alignments and interfaces. In this paper, we investigate thermoelectric currents in a…
Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely…
Surface acoustic waves in two-dimensional phononic crystals consisting of a square array of shallow, two to three micron deep cylindrical void inclusions are studied computationally via the finite element method. For the [110] propagation…
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium…
We experimentally demonstrate that the Raman active optical phonon modes of single layer graphene can be modulated by the dynamic local strain created by surface acoustic waves (SAWs). In particular, the dynamic strain field of the SAW is…
Interfaces of van der Waals (vdW) materials such as graphite and hexagonal boron nitride (hBN) exhibit low-friction sliding due to their atomically-flat surfaces and weak vdW bonding. We demonstrate that microfabricated gold also slides…
Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway…
We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils…
We study a new paradigm for ultrasonic driven object coating by using a model system where MHz-level surface acoustic waves (SAWs) drive the spreading of a silicone oil film atop topographical obstacles. We use experiments to show that…
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs…
For a sample of an arbitrary shape, the dependence of its conductance on the longitudinal and Hall conductivity is identical to that of a rectangle. We use analytic results for a conducting rectangle, combined with the semicircle model for…
We report large nonreciprocity in the transmission of shear-horizontal surface acoustic waves (SAWs) on LiTaO3 substrate coated with a FeCoSiB/NiFeCu magnetoelastic bilayer. The large difference in saturation magnetization of the two layers…
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…
The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully…
Thin V2O3 films were deposited on a piezoelectric substrate by electron-beam evaporation. Surface acoustic waves (SAW) were generated by interdigital-transducers (IDTs). The attenuation and sound velocity was investigated from 260K to 10K,…
A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by…
Quantum transport properties of disordered graphene with structural defects (Stone-Wales and divacancies) are investigated using a realistic {\pi}-{\pi}* tight-binding model elaborated from ab initio calculations. Mean free paths and…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…