Related papers: Anderson localization in doped semiconductors
We show that an interplay of double exchange and impurity randomness can explain the competition between metal-ferromagnetic and insulating charge ordered states in doped manganites. The double exchange is simplified in the Ising type,…
A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…
We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…
We investigate the currently debated issue concerning whether transition metal substitutions dope carriers in iron based superconductors. From first-principles calculations of the configuration-averaged spectral function of BaFe$_2$As$_2$…
We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…
We study the competition between interference due to multiple single-particle paths and Coulomb interaction in a simple model of an Anderson-like impurity with local-magnetic-field-induced level splitting coupled to ferromagnetic leads. The…
We study analytically the metal-insulator transition in a disordered conductor by combining the self-consistent theory of localization with the one parameter scaling theory. We provide explicit expressions of the critical exponents and the…
Strongly correlated fermions in a crystal or in an optical lattice in the presence of binary alloy disorder are investigated. We employ the statistical dynamical mean-field theory, which incorporates both, local fluctuations due to disorder…
Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…
In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…
The Anderson delocalization-localization transition is studied in multilayered systems with randomly placed interlayer bonds of density $p$ and strength $t$. In the absence of diagonal disorder (W=0), following an appropriate perturbation…
We investigate metal-insulator transitions on an interacting two-dimensional Dirac fermion system using the determinant quantum Monte Carlo method. The interplay between Coulomb repulsion, disorder and magnetic fields, drives the otherwise…
Anderson localization transitions are a universal quantum phenomenon sensitive to the disorder and dimensionality of electronic systems. Over the past decades, this intriguing topic has inspired overwhelmingly more theoretical studies than…
Although quantum phase transitions involved with Anderson localization had been investigated for more than a half century, the role of spin polarization in these metal-insulator transitions has not been clearly addressed as a function of…
We study the effect of disorder on the semimetal -- Mott insulator transition in the half-filled repulsive Hubbard model on a honeycomb lattice, a system that features vanishing density of states at the Fermi level. Using the determinant…
The insulator/metal transition induced by hole-doping due to neodymium vacancies of the Mott- Hubbard antiferromagnetic insulator, Nd1-xTiO3, is studied over the composition range 0.010(6) < x < 0.243(10). Insulating p-types conduction is…
Typically the disorder that alters the interference of particle waves to produce Anderson localization is potential scattering from randomly placed impurities. Here we show that disorder in the form of random gauge fields that act directly…
Anderson localization is a quantum phenomenon in which disorder localizes electronic wavefunctions. In this work, we propose a new approach to study Anderson localization based on the density matrix formalism. Drawing an analogy to the…
Recently, a metal-insulator transition (MIT) was found in the anisotropic Anderson model of localization by transfer-matrix methods (TMM). This MIT has been also investigated by multifractal analysis (MFA) and the same critical disorders…
We study the three-dimensional Anderson model of localization with anisotropic hopping, i.e., weakly coupled chains and weakly coupled planes. In our extensive numerical study we identify and characterize the metal-insulator transition by…