Related papers: Anderson localization in doped semiconductors
Our previous results [J.Phys.: Condens. Matter 14 (2002) 13777] dealing with the analytical solution of the two-dimensional (2-D) Anderson localization problem due to disorder is generalized for anisotropic systems (two different hopping…
Most of our quantitative understanding of disorder-induced metal-insulator transitions comes from numerical studies of simple noninteracting tight-binding models, like the Anderson model in three dimensions. An important outstanding problem…
We report results of a Monte Carlo study of doped, diluted magnetic semiconductors in the low carrier density (insulating) regime. We find that the system undergoes a transition from a paramagnet at high temperatures to a ferromagnet at low…
The method proposed by the present authors to deal analytically with the problem of Anderson localization via disorder [J.Phys.: Condens. Matter {\bf 14} (2002) 13777] is generalized for higher spatial dimensions D. In this way the…
We propose a minimal model to capture the anomalous low-temperature thermodynamics of doped semiconductors, such as Si:P, across the metal-insulator transition. We consider pairs of local magnetic moments coupled to a highly disordered,…
We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…
The LDA+DMFT (local density approximation combined with dynamical mean-field theory) computation scheme has been used to study spectral and magnetic properties of FeSi and Fe$_{1-x}$Co$_{x}$Si. Having compared different models we conclude…
We study the level-statistics of a disordered system undergoing the Anderson type metal-insulator transition. The disordered Hamiltonian is a sparse random matrix in the site representation and the statistics is obtained by taking an…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…
Recently, diluted Magnetic Semiconductors (DMS) doped with a small concentration of magnetic impurities, especially DMS doped with transition metal, inducing ferromagnetic DMSs have attracted a great interest. Using the Monte Carlo method…
The superconductor-insulator transition in the presence of strong compensation of dopants was recently realized in La doped YBCO. The compensation of acceptors by donors makes it possible to change independently the concentration of holes n…
We study the influence of boundary conditions transverse to the transport direction for disordered mesoscopic conductors both at the Anderson metal-insulator transition and in the metallic regime. We show that the boundary conditions…
Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT)together with the geometrically averaged ("typical") local density of states is employed to…
Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature…
Cluster dynamical mean field calculations based on 2, 4, 8 and 16 site clusters are used to analyze the doping-driven metal-insulator transition in the two dimensional Hubbard model. Comparison of results obtained on different clusters…
We study the thermal transport properties in three-dimensional disordered systems close to the metal-insulator transition within linear response. Using a suitable form for the energy-dependent conductivity $\sigma$, we show that the value…
In this paper we present a determinant quantum monte carlo study of the two dimensional Hubbard model with random site disorder. We show that, as in the case of bond disorder, the system undergoes a transition from an Anderson insulating…
High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Robust signatures of the low-doped electronic state include a Hall carrier density that initially tracks the number of doped holes and the…
We generalize the typical medium dynamical cluster approximation to multiband disordered systems. Using our extended formalism, we perform a systematic study of the non-local correlation effects induced by disorder on the density of states…
The fate of an injected hole in a Mott antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity in cuprates.…