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Strong correlation induced charge localization in antiferromagnets

Strongly Correlated Electrons 2013-11-22 v1

Abstract

The fate of an injected hole in a Mott antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity in cuprates. Here, we report a systematic numerical study based on the density matrix renormalization group (DMRG). It reveals a remarkable novelty and surprise for the single hole's motion in otherwise well-understood Mott insulators. Specifically, we find that the charge of the hole is self-localized by a novel quantum interference mechanism purely of strong correlation origin, in contrast to Anderson localization due to disorders. The common belief of quasiparticle picture is invalidated by the charge localization concomitant with spin-charge separation: the spin of the doped hole is found to remain a mobile object. Our findings unveil a new paradigm for doped Mott insulators that emerges already in the simplest single hole case.

Keywords

Cite

@article{arxiv.1212.6634,
  title  = {Strong correlation induced charge localization in antiferromagnets},
  author = {Zheng Zhu and Hong-Chen Jiang and Yang Qi and Chu-Shun Tian and Zheng-Yu Weng},
  journal= {arXiv preprint arXiv:1212.6634},
  year   = {2013}
}

Comments

Main text 7 pages + Supplementary information 4 pages

R2 v1 2026-06-21T23:01:31.871Z