Theory for Slightly Doped Antiferromagnetic Mott Insulators
Abstract
Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With the state behaving like charged quasi-particles with well-defined momenta, a rigid band is observed. These states have much less pairing correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high Tc cuprates doped lightly with holes or electrons. States showing the incoherent and spin-bag behaviors are also discussed. Using these wavefunctions, a number of results obtained by exact calculations are reproduced.
Cite
@article{arxiv.cond-mat/0210086,
title = {Theory for Slightly Doped Antiferromagnetic Mott Insulators},
author = {T. K. Lee and Chang-Ming Ho and Naoto Nagaosa and Wei-Cheng Lee},
journal= {arXiv preprint arXiv:cond-mat/0210086},
year = {2009}
}
Comments
12 (RevTex preprint) pages plus 4 (.jpg) figures. For the MOS2002 proceedings. Figures in much better quality can be requested by contacting directly the authors