Related papers: Nitrogen in Silicon for Room Temperature Single El…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
Electric control of individual atoms or molecules in a solid-state system offers a promising way to bring quantum mechanical functionalities into electronics. This idea has recently come into the reach of the established domain of silicon…
Reconstructive transformations in layered silicates need a high tem- perature in order to be observed. However, very recently, some systems have been found where transformation can be studied at temperatures 600 C below the lowest…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to…
We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating samples prepared with different annealing temperatures, we…
A potential experimental system, based on the Silicon Nitride (SiN) material, is proposed to generate steady-state room-temperature optomechanical entanglement. In the proposed structure, the nanostring interacts dispersively and reactively…
Quantum memories capable of storing and retrieving coherent information for extended times at room temperature would enable a host of new technologies. Electron and nuclear spin qubits using shallow neutral donors in semiconductors have…
We investigate the thermal transport properties of a temperature-biased Josephson tunnel junction composed of two different superconductors. We show that this simple system can provide a large negative differential thermal conductance…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
The electronic structures of boron nitride nanotubes (BNNTs) doped by organic molecules are investigated with density functional theory. Electrophilic molecule introduces acceptor states in the wide gap of BNNT close to the valence band…
We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion…
The charge transport properties of individual, metallic nitrogen doped, single-walled carbon nanotubes are investigated. It is demonstrated that n-type conduction can be achieved by nitrogen doping. Evidence was obtained by appealing to…
The nitrogen-vacancy (NV) center in diamond has been recognized as a high-sensitivity nanometer-scale metrology platform. Thermometry has been a recent focus, with attention largely confined to room temperature applications. Thermometry has…
We report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28 -on-insulator (28-SOI) substrates. Donor electron spin coherence in natural silicon is limited by spectral diffusion due to the residual…
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive `gate-only'…
\textit{DX} behavior limits $n$-type carrier concentrations in ultrawide-bandgap nitrides such as aluminum nitride (AlN) and cubic boron nitride ($c$-BN). Instead of acting as effective-mass donors, \textit{DX} centers capture two…
The effects of very low temperature on the electron transport in a [110] and [100] axially aligned unstrained silicon nanowires (SiNWs) are investigated. A combination of semi-empirical 10-orbital tight-binding method, density functional…