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Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure…
The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of…
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
In existing superconducting electronic systems, Josephson junctions play a central role in processing and transmitting small-amplitude electrical signals. However, Josephson-junction-based devices have a number of limitations including: (1)…
We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is…
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
Recent reports reveal that isothermal chemical doping of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this…
With the best overall electronic and thermal properties, single-crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning…
Nanodiamond hosting temperature-sensing centers constitutes a closed thermodynamic system, with the only window of energy exchange with the environment without direct contacts of a sensor with intracellular substrates, which is in fact the…
We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
Nitrogen-vacancy centres in nanodiamonds (NDs) provide a promising resource for quantum photonic systems. However, developing a technology beyond proof-of-principle physics requires optimally engineering its component parts. In this work,…
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to…
Temperature sensing at the nanoscale is a significant experimental challenge. Here, we report an approach using dressed states to make a leading quantum sensor (the nitrogen vacancy (NV) center in diamond) selectively sensitive to…