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Automated experiments in 4D Scanning Transmission Electron Microscopy are implemented for rapid discovery of local structures, symmetry-breaking distortions, and internal electric and magnetic fields in complex materials. Deep kernel…
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical…
Characterizing crystal structures and interfaces down to the atomic level is an important step for designing advanced materials. Modern electron microscopy routinely achieves atomic resolution and is capable to resolve complex arrangements…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical…
We present a new analysis method for atomic resolution four-dimensional scanning transmission electron microscopy (4D-STEM, in which a diffraction pattern is collected at each point of a raster scan of a focused electron beam across the…
The electrostatic modeling of conductors is a fundamental challenge in various applications, including the prediction of parasitic effects in electrical interconnects, the design of biasing networks, and the modeling of biological,…
Despite the widespread use of Scanning Transmission Electron Microscopy (STEM) for observing the structure of materials at the atomic scale, a detailed understanding of some relevant electron beam damage mechanisms is limited. Recent…
We analyze the quantum limit of sensitivity in four-dimensional scanning transmission electron microscopy (4D-STEM), which has emerged as a favored technique for imaging the structure of a wide variety of materials, including biological and…
In this work, we show that spectroscopic ellipsometry can be combined with photoemission spectroscopy to obtain complete interface band diagrams of non-ideal semiconductor heterointerfaces, such as interfaces between thin-film…
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyping. Although the lateral spread of the ion beam is often…
Diffuse optical imaging (DOI) offers valuable insights into scattering mediums, but the quest for high-resolution imaging often requires dense sampling strategies, leading to higher imaging errors and lengthy acquisition times. This work…
Driven by life-science applications, mega-electron-volt Scanning Transmission Electron Microscope (MeV-STEM) has been proposed to image thick biological samples. The high penetration of inelastic scattering signals of MeV electrons could…
A new method for dark field imaging is introduced which uses scanned electron diffraction (or 4DSTEM - 4-dimensional scanning transmission electron microscopy) datasets as its input. Instead of working on simple summation of intensity, it…
Electron beam-induced current (EBIC) imaging in the scanning transmission electron microscope (STEM), STEM-EBIC, provides direct access to carrier transport at the nanoscale. While well established in bulk SEM geometries, its application to…
The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moir\'e engineering is yet…
Increasing interest in three-dimensional nanostructures adds impetus to electron microscopy techniques capable of imaging at or below the nanoscale in three dimensions. We present a reconstruction algorithm that takes as input a focal…
Space charge layers (SCLs) at grain boundaries play a crucial role in modulating local electric fields and influencing the functional properties of materials, such as oxygen vacancy migration and ionic conductivity in oxide ceramics.…
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2.…
Semiconductor devices are scaled down to the level which constituent materials are no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an atomistic modeling approach needs to…