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Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

The rapid advancement of artificial intelligence (AI) has been marked by the large language models exhibiting human-like intelligence. However, these models also present unprecedented challenges to energy consumption and environmental…

To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient (UFEE) baseband processors. Traditional…

The memory demands of large-scale deep neural networks (DNNs) require synaptic weight values to be stored and updated in off-chip memory like dynamic random-access memory, which reduces energy efficiency and increases training time.…

Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition,…

The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates to implement in-memory computing, which is less…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

Flexibility at hardware level is the main driving force behind adaptive systems whose aim is to realise microarhitecture deconfiguration 'online'. This feature allows the software/hardware stack to tolerate drastic changes of the workload…

Content addressable memory is popular in intelligent computing systems as it allows parallel content-searching in memory. Emerging CAMs show a promising increase in bitcell density and a decrease in power consumption than pure CMOS…

Resistive random-access memory (RRAM) provides an excellent platform for analog matrix computing (AMC), enabling both matrix-vector multiplication (MVM) and the solution of matrix equations through open-loop and closed-loop circuit…

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

Neuromorphic computing systems uses non-volatile memory (NVM) to implement high-density and low-energy synaptic storage. Elevated voltages and currents needed to operate NVMs cause aging of CMOS-based transistors in each neuron and synapse…

The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…

In neuromorphic photonic systems, device operations are typically governed by analog signals, necessitating digital-to-analog converters (DAC) and analog-to-digital converters (ADC). However, data movement between memory and these…

The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices…

Emerging ReRAM-based accelerators process neural networks via analog Computing-in-Memory (CiM) for ultra-high energy efficiency. However, significant overhead in peripheral circuits and complex nonlinear activation modes constrain system…

Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…

Recent works propose neural network- (NN-) inspired analog-to-digital converters (NNADCs) and demonstrate their great potentials in many emerging applications. These NNADCs often rely on resistive random-access memory (RRAM) devices to…

As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…