Related papers: Phonon-assisted optical absorption of SiC polytype…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
In the present work performance of cesium iodide thin film photocathode is studied in detail. The optical absorbance of cesium iodide thin films have been analyzed in the spectral range of 190 nm to 900 nm. The optical band gap energy of…
We investigated optical absorption spectra near the fundamental absorption edge of beta-FeSi2 single crystals by transmission measurements. The phonon structure corresponding to the emission and absorption component was clearly observed in…
A complete experimental study of temperature dependence of the total spectral emissivity has been performed, for the first time, for absorber reflector selective coatings used in concentrated solar power (CSP) systems for energy harvesting.…
The coupling of atomic vibrations to electronic excitations - traditionally understood to be a source of energy loss in semiconductors - has recently been explored in photosynthetic light harvesting as a means to circumvent dissipation by…
Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. Here, we carry out an exploratory investigation of the electro-optic effect in high-quality-factor 4H-SiC…
We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…
In this paper we demonstrate that distinguishing between the polytypes of silicon carbide by means of infrared features in small-grain spectra is impossible. Therefore, the infrared spectra of carbon stars, unfortunately, do not provide a…
Recently, boron arsenide (BAs) has been measured high thermal conductivity in the experiments, great encouraging for the low-power photoelectric devices. Therefore, in the present work, we have systematically investigated the direct and…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this…
While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature…
We present basic laboratory infrared data on a large number of SiC particulate samples, which should be of great value for the interpretation of the 11.3 micron feature observed in the spectra of carbon-rich stars. The laboratory spectra…
Cubic silicon carbide phonon thermal conductivity has been calculated using anharmonic phonon analysis. The atomic interaction model was built using displacement-force data obtained with the High Efficiency Configuration Space Sampling…
The absorption spectra of silicon nanowires (SiNW) are calculated using semi-empirical $sp^{3}d^{5}s^{*}$ tight binding (TB) and Density Functional Theory (DFT) methods. The role of diameter, wave function symmetry, strain and…
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences,…
Here we perform a series of time-resolved experiments where a 100 fs pump pulse is tuned between 528 nm and 555 nm, across the second indirect gap of intrinsic silicon at ~540 nm which involves electrons in a higher-lying conduction band…
The second-order nonlinear optical susceptibility ($\chi_{abc}^{(2)}$) and linear electro-optical coefficient ($r_{abc}$) of a large number of single-walled zigzag, armchair and chiral SiC nanotubes (SiC-NTs) as well as bulk SiC polytypes…
This study investigates the mechanism of enhancing interfacial thermal transport performance in Silicon/Diamond (Si/Diamond) heterostructures using the phonon bridge. A heat transfer model for three-layer heterostructures is developed by…
Photonic ultrasound sensors offer unparalleled potential for improving spatial and temporal resolution in ultrasound imaging applications due to their size-independent noise figure, high sensitivity, and broad bandwidth characteristics. The…