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Related papers: Exchange interaction for Mn acceptor in GaAs: reve…

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The giant transverse magnetoresistance is observed in the case of photoinduced nonequilibrium carriers in an asymmetric undoped system of three GaAs/AlGaAs quantum wells at room temperature. In a magnetic field of 75 kOe, the resistance of…

Materials Science · Physics 2007-05-23 V. I. Tsebro , O. E. Omel'yanovskii , V. V. Kapaev , Yu. V. Kopaev , V. I. Kadushkin

The spin state of holes bound to Mn acceptors in GaMnAs is investigated by optical spectroscopy. Concentrations of Mn from 10^17 to 10^19 cm^-3 were studied as a function of magnetic field and temperature. The photoluminescence from…

Materials Science · Physics 2007-05-23 B. Lakshmi , G. Favrot , D. Heiman

The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…

Materials Science · Physics 2015-05-13 V. F. Kovalenko , S. V. Shutov , Ye. A. Baganov , M. M. Smyikalo

Element specific ultrafast demagnetization was studied in Fe$_{1-x}$Ni$_{x}$ alloys, covering the concentration range between $0.1<x<0.9$. For all compositions, we observe a delay in the onset of Ni demagnetization relative to the Fe…

We present a computational study of individual and pairs of substitutional Mn impurities on the (110) surface of GaAs samples based on density functional theory. We focus on the anisotropy properties of these magnetic centers and their…

Strongly Correlated Electrons · Physics 2011-08-29 M. Fhokrul Islam C. M. Canali

The mechanisms of magnetoelastic interaction in MnF$_2$ are studied using the method of acoustoelectric transformation. The temperature dependence of the piezomagnetic coupling coefficient and its anisotropy are determined in the…

Materials Science · Physics 2022-08-01 I. V. Bilych , K. R. Zhekov , T. N. Haidamak , G. A. Zvyagina , D. V. Fil , V. D. Fil

We present an explanation of recently observed giant magnetic moment and room-temperature ferromagnetism in the dielectric GaN doped with Gd. Our approach uses the polarization mechanism of exchange interaction, which occurs if the d-level…

Materials Science · Physics 2015-05-13 V. I. Litvinov , V. K. Dugaev

Structural and magnetic properties of GaAs thin films with embedded MnAs nanoclusters were investigated as function of the annealing temperature and layers composition. The presence of two kinds of nanoclusters with different dimensions and…

First principles total-energy pseudopotential calculations have been performed to investigate STM images of the (110) cross-sectional surface of Mn-doped GaAs. We have considered configurations with Mn in interstitial positions in the…

Materials Science · Physics 2007-05-23 A. Stroppa

The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs…

Materials Science · Physics 2018-03-21 L. Gluba , O. Yastrubchak , J. Z. Domagala , R. Jakiela , T. Andrearczyk , J. Żuk , T. Wosinski , J. Sadowski , M. Sawicki

We report a novel practical method to determine exchange parameters by using experimental susceptibility data in a relatively narrow temperature region and a low order high-temperature-expansion equation. This method is applied to a square…

Strongly Correlated Electrons · Physics 2009-10-30 Ken'ichi Takano , Kazuhiro Sano

The collective behavior of spins in a dilute magnetic semiconductor is determined by their mutual interactions and influenced by the underlying crystal structure. Hence, we begin with the atomic quantum-mechanical description of this system…

Materials Science · Physics 2010-10-12 Agnieszka Werpachowska , Tomasz Dietl

The properties of diluted Ga$_{1-x}$Mn$_x$As are calculated for a wide range of Mn concentrations within the local spin density approximation of density functional theory. M\"ulliken population analyses and orbital-resolved densities of…

Mesoscale and Nanoscale Physics · Physics 2025-06-10 Stefano Sanvito , Pablo Ordejon , Nicola A. Hill

Neutron scattering investigations of the paramagnetic correlations in the layered manganite La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$, which exhibits colossal magnetoresistance above the Curie transition at T$_C$ = 112 K, show that spins in…

Strongly Correlated Electrons · Physics 2009-10-30 R. Osborn , S. Rosenkranz , D. N. Argyriou , L. Vasiliu-Doloc , J. W. Lynn , S. K. Sinha , J. F. Mitchell , K. E. Gray , S. D. Bader

The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of…

We discuss the annealing-dependence of exchange bias in Ga1-xMnxAs epilayers that are overgrown with Mn. Although pure Mn is a known antiferromagnet, we find that the as-grown Mn overlayer does not produce any exchange coupling with…

Materials Science · Physics 2009-11-10 K. F. Eid , O. Maksimov , M. B. Stone , P. Schiffer , N. Samarth

An increase of the critical resolved shear stress of Invar alloys (Invar hardening) with a lowering temperature is explained. The effect is caused by a growth of the exchange interaction between dangling $d$-electron states of dislocation…

Materials Science · Physics 2009-10-31 M. Molotskii , V. Fleurov

We analyze the momentum- and temperature dependences of the magnetic susceptibilities and magnetic exchange interaction in paramagnetic bcc iron by a combination of density functional theory and dynamical mean-field theory (DFT+DMFT). By…

Strongly Correlated Electrons · Physics 2017-08-11 A. S. Belozerov , A. A. Katanin , V. I. Anisimov

A general consideration is presented for the magnetic interaction at an interface between a perovskite manganite and other transition metal oxides. The latter is specified by the electron number $n$ in the $d_{3z^2-r^2}$ level as…

Materials Science · Physics 2015-05-19 Satoshi Okamoto

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the…