Room-temperature ferromagnetism in dielectric GaN(Gd)

V. I. Litvinov; V. K. Dugaev

doi:10.1063/1.3143670

Room-temperature ferromagnetism in dielectric GaN(Gd)

Materials Science 2015-05-13 v1

Authors: V. I. Litvinov , V. K. Dugaev

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Abstract

We present an explanation of recently observed giant magnetic moment and room-temperature ferromagnetism in the dielectric GaN doped with Gd. Our approach uses the polarization mechanism of exchange interaction, which occurs if the d-level of Gd appears in the bandgap close to the valence band edge. Calculated ferromagnetic critical temperature and the value of the magnetic moment well correspond to experimental findings.

Keywords

room-temperature ferromagnetism GaN(Gd) giant magnetic moment polarization mechanism exchange interaction diluted magnetic semiconductor

Cite

@article{arxiv.0905.0500,
  title  = {Room-temperature ferromagnetism in dielectric GaN(Gd)},
  author = {V. I. Litvinov and V. K. Dugaev},
  journal= {arXiv preprint arXiv:0905.0500},
  year   = {2015}
}

Comments

9 pages, 3 figures submitted to Applied Physics Letters

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