Related papers: Exchange interaction for Mn acceptor in GaAs: reve…
The spin-wave spectrum in the metallic ferromagnetic lantha-num cubic manganites was investigated. The interactions with four coordination spheres (32 neighbors) were taken into ac-count. The Heisenberg superexchange between all manganese…
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of…
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs.…
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation…
The recently reported Rutherford backscattering and particle-induced X-ray emission experiments have revealed that in low-temperature MBE grown GaMnAs a significant part of the incorporated Mn atoms occupies tetrahedral interstitial sites…
We complete our earlier (Phys. Rev. B, {\bf 66}, 134435 (2002)) study of the electronic structure, exchange interactions and Curie temperature in (GaMn)As and extend the study to two other diluted magnetic semiconductors (GaCr)As and…
We study the exchange interactions in half-metallic Heusler alloys using first-principles calculations in conjunction with the frozen-magnon approximation. The Curie temperature is estimated within both mean-field (MF) and…
We utilize a single atom substitution technique with spectroscopic imaging in a scanning tunneling microscope (STM) to visualize the anisotropic spatial structure of magnetic and non-magnetic transition metal acceptor states in the GaAs…
The temperature dependence of resistivity, magnetization and electron-spin resonance of the $\alpha- MnS $ single crystal were measured in temperature range of $5 K < T < 550 K$. Magnetization hysteresis in applied magnetic field up to 0.7…
We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While…
Titanium alloys are widely used in aerospace, biomedical, and energy applications owing to their high specific strength, corrosion resistance, and biocompatibility. Among them, $\alpha$-titanium alloys with a hexagonal close-packed (hcp)…
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As…
In search for the origins of the extraordinary low twinning stress of Ni-Mn-Ga magnetic shape memory alloys we studied the thermally induced changes of structure in Ni$_{50}$Mn$_{25+x}$Ga$_{25-x}$ ($x$=2.7--3.9) single crystal samples and…
We use the density-functional calculations to investigate the compositional dependence of the lattice constant of (Ga,Mn)As containing various native defects. The lattice constant of perfect mixed crystals does not depend much on the…
The pressure dependence of the resistivity and structure of La0.60Y0.07Ca0.33MnO3 has been explored in the pressure range from 1 atm to ~7 GPa. The metal to insulator transition temperature (TMI) was found to reach a maximum and the…
We use the local density approximation (LDA) and LDA+U schemes to study the magnetism of (GaMn)As and (GaMn)N for a number of Mn concentrations and varying number of holes. We show that for both systems and both calculational schemes the…
Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices…
Magnetic doping of semiconductor nanostructures is actively pursued for applications in magnetic memory and spin-based electronics. Central to these efforts is a drive to control the interaction strength between carriers (electrons and…
The tunnel magnetoresistance (TMR) is one of the most important spintronic phenomena but its reduction at finite temperature is a severe drawback for applications. Here, we reveal a crucial determinant of the drawback, that is, the $s$-$d$…
We present a detailed theoretical investigation on the radiation induced giant magnetoresistance oscillations recently discovered in high-mobility two-dimensional electron gas. Electron interactions with impurities, transverse and…