Related papers: Interfacial magnetic anisotropy controlled spin pu…
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using…
Pure spin currents transport angular momentum without an associated charge flow. This unique property makes them attractive for spintronics applications, such as torque induced magnetization control in nanodevices that can be used for…
Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission…
Using irreversible thermodynamics we show that current-induced spin transfer torque within a magnetic domain implies spin pumping of current within that domain. This has experimental implications for samples both with conducting leads and…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
Spin accumulation induced by spin-orbit coupling is experimentally quantified in stack with in-plane magnetic anisotropy via the contribution of spin accumulation to Hall resistances. Using a biasing direct current the spin accumulation…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
We report the generation and detection of spin-orbit torque ferromagnetic resonance (STFMR) in micropatterned epitaxial Fe/Pt bilayers grown by molecular beam epitaxy. The magnetic field dependent measurements at an in-plane magnetic field…
In ferromagnetic (FM) metal/organic semiconductor (OSC) heterostructures charge transfer can occur which leads to induction of magnetism in the non-magnetic OSC. This phenomenon has been described by the change in the density of states in…
Current-induced torques originating from earth-abundant 3d elements offer a promising avenue for low-cost and sustainable spintronic memory and logic applications. Recently, orbital currents -- transverse orbital angular momentum flow in…
Spin pumping in ferromagnets provides a source of pure spin currents. Via the inverse spin Hall effect a spin current is converted into a charge current and a corresponding detectable DC-voltage. The ratio of injected spin current to…
We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before…
CoV___O___ (CVO) stands out among spinel vanadates for its ultra-short V-V distances, placing it at the brink of itinerant electron behaviour-an ideal playground for strain engineering. In this work, we exploit this sensitivity by growing…
Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
The subject of this study is spin transport through a molecular orbital connected to two leads, and coupled via exchange interaction with a precessing anisotropic molecular spin in a constant magnetic field. The inelastic spin-flip…
We report the growth of MgO[001]//Fe(6 nm)/MgO(7 nm) and MgO[001]//Fe(6 nm)/Pt(6 nm) by molecular beam epitaxy and show that the full characterization by spin-orbit ferromagnetic resonance (SO-FMR) allows the determination of magnetic…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…