Related papers: Interfacial magnetic anisotropy controlled spin pu…
The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored.…
Materials with strong spin orbit coupling (SOC) are essential for realizing spin orbit torque (SOT) based magnetic memory devices. Transition metal dichalcogenides (TMDs) are promising candidates for such appli cations because of their…
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large…
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse…
Spin pumping is an interfacial spin current generation from the ferromagnetic layer to the non-magnetic metal at its interface. The polarization of the pumped spin current $\textbf{J}_s \propto \textbf{m}\times \dot{\textbf{m}}$ depends on…
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA)…
The properties of quantum systems interacting with their environment, commonly called open quantum systems, can be strongly affected by this interaction. While this can lead to unwanted consequences, such as causing decoherence in qubits…
Interfacial engineering enables various emergent effects such as spin reorientations and transport anisotropy. Noncollinear spin textures are essential for realizing many emergent quantum transport phenomena. However, driving such spin…
We investigate the ultrafast spin dynamics in an epitaxial hcp(1100) cobalt thin film. By performing pump-probe magneto-optical measurements with the magnetization along either the easy or hard magnetic axis, we determine the…
The ever-increasing demand for efficient data storage and processing has fueled the search for novel memory devices. Spintronics offers an alternative fast and efficient solution using spin-to-charge interconversion. In this work, we…
For magnonics and spintronics applications, the spin polarization ($P$) of a transport current and the magnetic damping ($\alpha$) play a crucial role, e.g. for magnetization dynamics and magnetization switching applications. In particular,…
Exploring novel systems with perpendicular magnetic anisotropy (PMA) is vital for advancing memory devices. In this study, we report an intriguing PMA system involving an ultrathin Fe layer on an antiferromagnetic (AFM) CoO(001) surface.…
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
The electrical and structural properties of Co40Fe40B20 (CoFeB) alloy are tunable with thermal annealing. This is key in the optimization of CoFeB-based spintronic devices, where the advantageously low magnetic coercivity, high spin…
Interest in planar Hall effect (PHE) sensors has re-emerged in recent years due to their promising potential for a wide range of applications, particularly in biotechnology. Sensor sensitivity can be enhanced by lowering the effective…
The recent discovery of magnetic topological insulators has opened new avenues to explore exotic states of matter that can emerge from the interplay between topological electronic states and magnetic degrees of freedom, be it ordered or…
Transition metal dichalcogenides (TMD) possess novel properties which makes them potential candidates for various spintronic applications. Heterostructures of TMD with magnetic thin film have been extensively considered for spin-orbital…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…
In anisotropic crystals, the direction-dependent effective mass of carriers can have a profound impact on spin transport dynamics. The puckered crystal structure of black phosphorus (BP) leads to direction-dependent charge transport and…