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Advances in CMOS technology have made high resolution image sensors possible. These image sensor pose significant challenges in terms of the amount of raw data generated, energy efficiency and frame rate. This paper presents a new design…
The transistors used to construct Integrated Circuits (ICs) continue to shrink. While this shrinkage improves performance and density, it also reduces trust: the price to build leading-edge fabrication facilities has skyrocketed, forcing…
Increase in image resolution require the ability of image sensors to pack an increased number of circuit components in a given area. On the the other hand a high speed processing of signals from the sensors require the ability of pixel to…
In this chapter we intend to discuss the major trends in the evolution of microelectronics and its eventual transition to nanoelectronics. As it is well known, there is a continuous exponential tendency of microelectronics towards…
3D-Integration is a promising technology towards higher interconnect densities and shorter wiring lengths between multiple chip stacks, thus achieving a very high performance level combined with low power consumption. This technology also…
A novel design for a low dropout (LDO) voltage regulator is presented and dedicated to power many sections of a typical cellular handset. However, these baseband, RF, and audio sections have different requirements that influence which LDO…
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the…
The performance of short distance optical interconnections in general relies very strongly on coupling structures, since they will determine the overall efficiency of the system to a large extent. Different configurations can be considered…
Non-Intrusive Load Monitoring (NILM) enables the disaggregation of the global power consumption of multiple loads, taken from a single smart electrical meter, into appliance-level details. State-of-the-Art approaches are based on Machine…
Integrated photonics offers great potential for quantum communication devices in terms of complexity, robustness and scalability. Silicon photonics in particular is a leading platform for quantum photonic technologies, with further benefits…
Nowadays System-On-Chips (SoCs) have evolved considerably in term of performances, reliability and integration capacity. The last advantage has induced the growth of the number of cores or Intellectual Properties (IPs) in a same chip.…
Power consumption has emerged as a primary design constraint for integrated circuits (ICs). In the Nano meter technology regime, leakage power has become a major component of total power. Full adder is the basic functional unit of an ALU.…
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…
Monolithic stitched CMOS sensors are explored for the upgrade of Inner Tracking System of the ALICE experiment (ITS3) and the R&D of the CERN Experimental Physics Department. To learn about stitching, two 26 cm long stitched sensors, the…
With the globalization of manufacturing and supply chains, ensuring the security and trustworthiness of ICs has become an urgent challenge. Split manufacturing (SM) and layout camouflaging (LC) are promising techniques to protect the…
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…
Optical modulators in the visible regime have far-reaching applications from biophotonics to quantum science. Implementations of such optical phase modulators on a complementary metal-oxide-semiconductor (CMOS) compatible platform have been…
The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for…
For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…
Silicon strip sensors have long been a reliable technology for particle detection. Here, we push the limits of silicon tracking detectors by targeting an unprecedentedly low material budget of 2%-7% $X_0$ in an 8-layer 4 m$^2$ detector…