Related papers: Voltage Gated Domain Wall Magnetic Tunnel Junction…

We use a pure spin current originating from the spin Hall effect to generate a spin-orbit torque (SOT) strongly reducing the effective damping in an adjacent ferromagnet. Due to additional microwave excitation, large spin-wave amplitudes…

Domain-wall skyrmions (DWSKs) are topological spin textures confined within domain walls that have recently attracted significant attention due to their potential applications in racetrack memory technologies. In this study, we…

Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and process information at the nanoscale. In the presence of asymmetric exchange interactions, their chirality, which governs their dynamics, is…

Due to the limitations of realizing artificial neural networks on prevalent von Neumann architectures, recent studies have presented neuromorphic systems based on spiking neural networks (SNNs) to reduce power and computational cost.…

Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…

Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven…

We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…

Real-time accurate detection of three-dimensional (3D) objects is a fundamental necessity for self-driving vehicles. Most existing computer vision approaches are based on convolutional neural networks (CNNs). Although the CNN-based…

Hardware implementation of neuromorphic computing can significantly improve performance and energy efficiency of machine learning tasks implemented with spiking neural networks (SNNs), making these hardware platforms particularly suitable…

Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…

We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…

Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…

Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional…

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…

We demonstrate field and current controlled magnetodynamics in nanocontact spin-torque nano-oscillators (STNOs) based on orthogonal magnetic tunnel junctions (MTJs). We systematically analyze the microwave properties (frequency $f$,…

A magnetic skyrmionium can be perceived as an association of two magnetic skyrmions with opposite topological charges. In this work, we have investigated the transformation of skyrmionium into multi-skyrmionic states via domain wall (DW)…

The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…

Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…