Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a microwave field-driven skyrmionic device with the transistor-like function, where the motion of a skyrmion in a voltage-gated ferromagnetic nanotrack is studied by micromagnetic simulations. It is demonstrated that the microwave field can drive the motion of a skyrmion by exciting propagating spin waves, and the skyrmion motion can be governed by a gate voltage. We also investigate the microwave current-assisted creation of a skyrmion to facilitate the operation of the transistor-like skyrmionic device on the source terminal. It is found that the microwave current with an appropriate frequency can reduce the threshold current density required for the creation of a skyrmion from the ferromagnetic background. The proposed transistor-like skyrmionic device operated with the microwave field and current could be useful for building future skyrmion-based circuits.
@article{arxiv.1601.05559,
title = {A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation},
author = {Jing Xia and Yangqi Huang and Xichao Zhang and Wang Kang and Chentian Zheng and Xiaoxi Liu and Weisheng Zhao and Yan Zhou},
journal= {arXiv preprint arXiv:1601.05559},
year = {2019}
}