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Related papers: Field-free spin-orbit torque switching of an antif…

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Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…

Materials Science · Physics 2018-07-18 Jong Min Lee , Kaiming Cai , Guang Yang , Yang Liu , Rajagopalan Ramaswamy , Pan He , Hyunsoo Yang

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…

Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…

Materials Science · Physics 2016-05-04 Shunsuke Fukami , Chaoliang Zhang , Samik DuttaGupta , Hideo Ohno

Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…

Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…

Materials Science · Physics 2023-10-19 Chao-Yao Yang , Sheng-Huai Chen , Chih-Hsiang Tseng , Chang-Yang Kuo , Hsiu-Hau Lin , Chih-Huang Lai

We predict ultrafast switching in a chiral anti-ferromagnet that occurs at femtosecond times, nearly 5 orders of magnitude faster than the torque induced nanosecond switching previously observed. The physical mechanism, quite different from…

Electric control of N\'eel vector is a central task of antiferromagnetic (AFM) spintronics. The major scheme so far relies on the linear N\'eel torque, which however is restricted to AFMs with broken inversion symmetry. Here, we propose a…

Materials Science · Physics 2025-06-13 Jin Cao , Weikang Wu , Huiying Liu , Shen Lai , Cong Xiao , X. C. Xie , Shengyuan A. Yang

Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…

We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…

Materials Science · Physics 2016-11-25 J. Zelezny , H. Gao , K. Vyborny , J. Zemen , J. Masek , A. Manchon , J. Wunderlich , J. Sinova , T. Jungwirth

We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a…

Mesoscale and Nanoscale Physics · Physics 2015-05-30 Jacob Linder

Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…

Antiferromagnetic (AFM) spintronics has been receiving tremendous attention due to their ultrafast kinetics, zero stray field, immune to external magnetic field, and potential to minimizing magnetic storage devices. The optical control of…

Materials Science · Physics 2025-06-17 Q. Xue , J. Zhou

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…

N\'eel vector, the order parameter of collinear antiferromagnets, serves as a state variable in associated antiferromagnetic (AFM) spintronic devices to encode information. A deterministic switching of N\'eel vector is crucial for the…

Materials Science · Physics 2026-03-03 Shui-Sen Zhang , Zi-An Wang , Bo Li , Wen-Jian Lu , Mingliang Tian , Yu-Ping Sun , Haifeng Du , Ding-Fu Shao

Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…

In this work, we investigate the steady propagation of 180-degree domain walls (180DWs) of N\'{e}el vectors in thin antiferromagnetic strips under perpendicularly injected spin currents with various polarization orientations. Our results…

Mesoscale and Nanoscale Physics · Physics 2025-06-18 Jiaxin Du , Mei Li , Bin Xi , Xue Zhang , Yi Sun , Chun-Gui Duan , Jie Lu

Antiferromagnets exhibit distinctive characteristics such as ultrafast dynamics and robustness against perturbative fields, thereby attracting considerable interest in fundamental physics and technological applications. Recently, it was…

Mesoscale and Nanoscale Physics · Physics 2021-11-03 Atsushi Ono , Sumio Ishihara

Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike…

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