Related papers: Hole spin driving by strain-induced spin-orbit int…
Elementary excitations in a paramagnetic semiconductor quantum well confined to a cylindrical surface are theoretically studied on the basis of coupled spin-charge drift-diffusion equations. The electric-field-mediated eigenmodes are…
Scaling up qubits is a necessary step to realize useful systems of quantum computation. Here we demonstrate coherent manipulations of four individual electron spins using a micro-magnet method in a quadruple quantum dot - the largest number…
Manipulation of single spins is essential for spin-based quantum information processing. Electrical control instead of magnetic control is particularly appealing for this purpose, since electric fields are easy to generate locally on-chip.…
We derive the effective dimensionally reduced Schr\"odinger equation with spin-orbit interaction in low-dimensional electronic strain driven nanostructures. A method of adiabatic separation among fast normal quantum degrees of freedom and…
The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark…
Spin-orbit interaction accounts for the coupling of momentum and spin degrees of freedom of electrons and holes in semiconductor materials. In quantum information processing, it allows for electrical control of spin states and for the…
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…
We obtain the spin-orbit interaction and spin-charge coupled transport equations of a two-dimensional heavy hole gas under the influence of strain and anisotropy. We show that a simple two-band Hamiltonian can be used to describe the holes.…
One of the exciting features of two-dimensional (2D) materials is their electronic and optical tunability through strain engineering. Previously, we found a class of 2D ferroelectric Rashba semiconductors PbX (X = S, Se, Te) with tunable…
Qubits based on quantum dots have excellent prospects for scalable quantum technology due to their inherent compatibility with standard semiconductor manufacturing. While early on it was recognized that holes may offer a multitude of…
Hole spin relaxation in [001] strained asymmetric Si/Si$_{0.7}$Ge$_{0.3}$ (Ge/Si$_{0.3}$Ge$_{0.7}$) quantum wells is investigated in the situation with only the lowest hole subband being relevant. The effective Hamiltonian of the lowest…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
We propose a spin-orbit qubit in a nanowire quantum dot on the surface of a multiferroic insulator with a cycloidal spiral magnetic order. The spiral exchange field from the multiferroic insulator causes an inhomogeneous Zeeman-like…
A spin-photon interface is one of the key components of a quantum network. Physical platforms under investigation span the range of modern experimental physics, from ultra-cold atoms and ions to a variety of solid-state systems. Each system…
We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a…
We examine electron transport through semiconductor quantum dot subject to a continuous circularly polarized optical irradiation resonant to the electron - heavy hole transition. Electrons having certain spin polarization experience Rabi…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…