Related papers: Radio-frequency reflectometry in bilayer graphene …
Twisted bilayer graphene with a twist angle of around 1.1{\deg} features a pair of isolated flat electronic bands and forms a strongly correlated electronic platform. Here, we use scanning tunneling microscopy to probe local properties of…
We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane…
We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…
The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…
We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The…
Ballistic, gate-defined devices in two-dimensional materials offer a platform for electron optics phenomena influenced by the material's properties and gate control. We study the ray trajectory dynamics of all-electronic, gate-defined…
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed.…
In this letter, we report a method to control reflection phase of microwaves using electrically tunable graphene devices. The device consists of mutually gated large-area graphene layers placed at a quarter-wave distance from a metallic…
frared reflectance spectroscopy at 4K in fields up to 31T. Both Schr\"odinger-like (K-point) and Dirac-like (H-point) Landau level transitions have been observed, and their magnetic field dispersion are analyzed by a newly-derived limiting…
We present a combined experimental and theoretical study of photovoltage generation in a bilayer graphene (BLG) transistor structure exposed to subterahertz radiation. The device features a global bottom and split top gate, enabling…
We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the…
Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to…
We provide a theoretical study of the conductance response of systems based on graphene nanoribbon to the potential of a scanning probe. The study is based on the Landauer approach for the tight-binding Hamiltonian with an implementation of…
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of…
The present Letter proposes a device based on graphene for infrared light emission. It is based on a n- and p-doped monolayer graphene (MGs), with Fermi energies $E_F$ and -$E_F$, respectively, sandwiching a bilayer graphene (BG) with…
Bilayer graphene has many unique optoelectronic properties , including a tuneable band gap, that make it possible to develop new and more efficient optical and nanoelectronic devices. We have developed a Monte Carlo simulation for a single…
Graphene-based materials show promise for spintronic applications due to their potentially large spin coherence length. On the other hand, because of their small intrinsic spin-orbit interaction, an external magnetic source is desirable in…
Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical…
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…
A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.