English

A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio

Mesoscale and Nanoscale Physics 2010-12-07 v1
Authors: Z. Moktadir , S. A. Boden , A. Ghiass , H. Rutt. , H. Mizuta
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Abstract

A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.

Keywords

graphene transistor U-shape geometry gallium focused ion beam back gate Ion/Ioff ratio bilayer graphene

Cite

@article{arxiv.1012.1105,
  title  = {A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio},
  author = {Z. Moktadir and S. A. Boden and A. Ghiass and H. Rutt. and H. Mizuta},
  journal= {arXiv preprint arXiv:1012.1105},
  year   = {2010}
}

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