Related papers: Metal-insulator phase separation in KTaO3-based tw…
The correlation-driven metal-insulator transition (MIT) of BaVS$_3$ was studied by polarized infrared spectroscopy. In the metallic state two types of electrons coexist at the Fermi energy: The quasi 1D metallic transport of $A_{1g}$…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
A simple non-interacting-electron model, combining local quantum tunneling and global classical percolation (due to a finite dephasing time at low temperatures), is introduced to describe a metal-insulator transition in two dimensions. It…
We introduce an elementary model for the electrostatic self-consistent potential in a two-dimensional electron gas. By considering the perpendicular degree of freedom arising from the electron tunneling out of the system plane, we predict a…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while…
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the…
Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over a wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs from the sharp MITs observed in most other transition-metal…
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-electron interactions has been used in modeling the MIT phenomena…
The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…
We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi$_2$Se$_3$ can be controlled by choosing an appropriate kind of metal elements and…
Systematic investigation of the electronic phase separation on macroscopic scale is reported in the organic Mott system $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Real space imaging of the phase separation is obtained by means of scanning…
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…
Electronic phase separation is crucial for the fascinating macroscopic properties of the LaAlO3/SrTiO3 (LAO/STO) paradigm oxide interface, including the coexistence of superconductivity and ferromagnetism. We investigate this phenomenon…
We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the…
The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…
Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…