Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

Han-Jin Noh; Jinwon Jeong; En-Jin Cho; Joonbum Park; Jun Sung Kim; Ilyou Kim; Byeong-Gyu Park; Hyeong-Do Kim

doi:10.1103/PhysRevB.91.121110

Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

Materials Science 2015-03-25 v1

Authors: Han-Jin Noh , Jinwon Jeong , En-Jin Cho , Joonbum Park , Jun Sung Kim , Ilyou Kim , Byeong-Gyu Park , Hyeong-Do Kim

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

We have demonstrated that the evolution of the two-dimensional electron gas (2DEG) system at an interface of metal and the model topological insulator (TI) Bi $_2$ Se $_3$ can be controlled by choosing an appropriate kind of metal elements and by applying a low temperature evaporation procedure. In particular, we have found that only topological surface states (TSSs) can exist at a Mn/Bi $_2$ Se $_3$ interface, which would be useful for implementing an electric contact with surface current channels only. The existence of the TSSs alone at the interface was confirmed by angle-resolved photoemission spectroscopy (ARPES). Based on the ARPES and core-level x-ray photoemission spectroscopy measurements, we propose a cation intercalation model to explain our findings.

Keywords

topological insulators oxide interfaces transition metal dichalcogenides

Cite

@article{arxiv.1406.2048,
  title  = {Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface},
  author = {Han-Jin Noh and Jinwon Jeong and En-Jin Cho and Joonbum Park and Jun Sung Kim and Ilyou Kim and Byeong-Gyu Park and Hyeong-Do Kim},
  journal= {arXiv preprint arXiv:1406.2048},
  year   = {2015}
}

Comments

13 pages, 4 figures

Controlling the 2DEG states evolution at a metal/Bi$_2$Se$_3$ interface

Abstract

Keywords

Cite

Comments

Related papers