Related papers: Giant efficiency of long-range orbital torque in C…
The surface impedance of Nb/CuMn (superconducting/spin-glass) bilayers has been measured at 10 GHz with the parallel plate resonator technique to obtain information about the exotic behavior of the order parameter in…
We show that spin-orbit coupling at the interface between a superconducting film of the finite lateral size and the underlying ferromagnetic insulator with in-plane exchange field gives rise to a series of non-reciprocal effects provided…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…
We report detailed studies on ferromagnet--superconductor bilayer structures. Epitaxial bilayer structures of half metal--colossal magnetoresistive La$_{\mathrm{2/3}}$Ca$_{\mathrm{1/3}}$MnO$_{\mathrm{3}}$ (HM--CMR) and…
The orbital Hall effect provides an alternative means to the spin Hall effect to convert a charge current into a flow of angular momentum. Recently, compelling signatures of orbital Hall effects have been identified in 3d transition metals.…
The inverse orbital Hall effect (IOHE) has recently attracted considerable attention as an emerging mechanism for terahertz (THz) emission based on ultrafast angular-momentum-to-charge conversion. Most experimental studies have focused on…
Electrical readout of 180$^\circ$ switching in strictly compensated collinear antiferromagnets remains a major challenge in antiferromagnetic spintronics. Electrical writing of perpendicularly magnetized ferromagnets by out-of-plane orbital…
Measurements of spin-orbit torques in a ferromagnetic/nonmagnetic multilayer are typically based on an assumption that the entire ferromagnetic layer uniformly responds to the spin-orbit torque. This assumption breaks down when the…
We demonstrate a nonlinear Hall effect due to the boundary spin accumulation in Pt films grown on Al2O3 substrates. This Hall effect and the previously demonstrated Hanle magnetoresistance provide a complete picture of the spin-precession…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
We experimentally observe nonlinear spin torque in metallic bilayers of platinum and permalloy by means of spin-torque ferromagnetic-resonance (ST-FMR) under massive dc current injection. The observed nonlinear spin torque exerted to…
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of…
We study the perpendicular magnetic anisotropy (PMA) of the CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti which has been suggested as the spin-orbit-torque-related underlayers. The saturation magnetization of the CoFeB depends on…
We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo, W) at the Pt/Co interface on the spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. We find that the…
Topological insulators have emerged as an important material class for efficient spin-charge interconversion. Most topological insulators considered to date are binary or ternary compounds, with the exception of $\alpha$-Sn. Here we report…
Spin transport in thin-film materials can be studied by ferromagnetic resonantly (FMR) driven spin pumping of a charge-free spin current which induces an electromotive force through the inverse spin Hall effect (ISHE). For quantitative ISHE…
A spin-torque ferromagnetic resonance study is performed in epitaxial $\mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to…
The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
We study the spin transport theoretically in heterostructures consisting of a ferromagnetic metallic thin film sandwiched between heavy-metal and oxide layers. The spin current in the heavy metal layer is generated via the spin Hall effect,…