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Electrical transport properties as a function of magnetic field and time have been investigated in polycrystalline, Nd_{0.84}Sr_{0.16}CoO_3. A strong exchange bias (EB) effect is observed associated with the fairly large intragranular…

Strongly Correlated Electrons · Physics 2009-11-09 M. Patra , S. Majumdar , S. Giri

The magnetocaloric effect (MCE) in many rare earth (RE) based intermetallic compounds has been extensively investigated during last two decades, not only due to their potential applications for magnetic refrigeration but also for better…

Materials Science · Physics 2016-01-18 Lingwei Li

We report on a giant negative magnetoresistance in very high mobility GaAs/AlGaAs heterostructures and quantum wells. The effect is the strongest at $B \simeq 1$ kG, where the magnetoresistivity develops a minimum emerging at $T \lesssim 2$…

Mesoscale and Nanoscale Physics · Physics 2012-02-07 A. T. Hatke , M. A. Zudov , J. L. Reno , L. N. Pfeiffer , K. W. West

We present a new class of artificial materials which exhibit a tailored response to the electrical component of electromagnetic radiation. These electric metamaterials (EM-MMs) are investigated theoretically, computationally, and…

Materials Science · Physics 2007-05-23 W. J. Padilla , M. T. Aronsson , C. Highstrete , Mark Lee , A. J. Taylor , R. D. Averitt

Extremely large magnetoresistance is realized in the nonmagnetic layered metal PdCoO2. In spite of a highly conducting metallic behavior with a simple quasi-two-dimensional hexagonal Fermi surface, the interlayer resistance reaches up to…

The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant…

The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal state resistivity and…

Superconductivity · Physics 2009-11-07 X. H. Chen , Y. S. Wang , Y. Y. Xue , R. L. Meng , Y. Q. Wang , C. W. Chu

The use of single molecules to design electronic devices is an extremely challenging and fundamentally different approach to further downsizing electronic circuits. Two-terminal molecular devices such as diodes were first predicted [1] and,…

Exceptional-point (EP) sensors are characterized by a square-root resonant frequency bifurcation in response to an external perturbation. This has lead numerous suggestions for using these systems for sensing applications. However, there is…

Quantum Physics · Physics 2024-08-14 Hudson A. Loughlin , Vivishek Sudhir

Recent measurements of the magnetoresistance (MR) of amorphous superconducting thin films in tilted magnetic fields have displayed several surprising experimental details, in particular a strong dependence of the MR on field angle at low…

Superconductivity · Physics 2015-07-22 Elkana Porat , Yigal Meir

The design and later use of modern spectropolarimeters and magnetographs require a number of tolerance specifications that allow the developers to build the instrument and then the scientists to interpret the data accuracy. Such…

Solar and Stellar Astrophysics · Physics 2015-06-05 J. C. del Toro Iniesta , V. Martínez Pillet

Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their…

The precise derivation of physical quantities like temperature or pressure at arbitrary locations is useful in numerous contexts, e.g. medical procedures or industrial process engineering. The novel sensor technology of magneto-mechanical…

Applied Physics · Physics 2025-09-01 Jonas Faltinath , Fabian Mohn , Fynn Foerger , Martin Möddel , Tobias Knopp

We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…

Strongly Correlated Electrons · Physics 2015-11-09 Yongkang Luo , H. Li , Y. M. Dai , H. Miao , Y. G. Shi , H. Ding , A. J. Taylor , D. A. Yarotski , R. P. Prasankumar , J. D. Thompson

We report giant magnetoresistance up to 150 percent at low bias current and low temperature as well as room temperature magnetoresistance in polymeric spin-valves having the structure LSMO/conjugated polymer/Co. The conjugated polymers,…

Materials Science · Physics 2016-08-31 Sayani Majumdar , Himadri S. Majumdar , Reino Laiho , Ronald Osterbacka

We study analytically the Rashba-Edelstein magnetoresistance (REMR) in a structure made from an insulator ferromagnet, such as yttrium iron garnet (YIG), and a 2D material (2DM) with direct and inverse Rashba-Edelstein effects, such as SLG…

Materials Science · Physics 2023-04-26 Wibson W. G. Silva , José Holanda

Magnetoelastic composites are integral elements of sensors and actuators utilizing magnetostriction for their functionality. Their sensitivity typically scales with the saturation magnetostriction and inversely with magnetic anisotropy.…

Delta-E effect-based magnetoelectric sensors have emerged as promising technology for detecting weak magnetic fields at low frequencies. However, the performance of such sensors remains difficult to predict, as signal and noise…

An intriguing phenomenon in topological semimetals and topological insulators is the negative magnetoresistance (MR) observed when a magnetic field is applied along the current direction. A prevailing understanding to the negative MR in…

Mesoscale and Nanoscale Physics · Physics 2017-10-25 Xin Dai , Z. Z. Du , Hai-Zhou Lu

One of recent surprising discoveries is the unusual anisotropic magnetoresistance (UAMR) that depends on two magnetization components perpendicular to the current differently, in contrast to the conventional anisotropic magnetoresistance…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 M. Q. Dong , Zhi-Xin Guo , X. R. Wang