Related papers: Extraordinary magnetometry -- a review on extraord…
Negative longitudinal magnetoresistance (NLMR) has been reported in a variety of materials and has attracted extensive attention as an electrotransport hallmark of topological Weyl semimetals. However, its origin is still under debate.…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
Of the perovskites, ABX_<3>, a subset of special interest is the family in which the A site is occupied by a lanthanide ion, the B site by a rare earth and X is oxygen, as such materials often exhibit a large change in electrical resistance…
The heavy fermion systems present a unique platform in which strong electronic correlations give rise to a host of novel, and often competing, electronic and magnetic ground states. Amongst a number of potential experimental tools at our…
Placing several electrodes at the edge of a micrometer-size Sri Lankan natural graphite sample at distances comparable to the size of the internal crystalline regions, we found record values for the change of the resistance with magnetic…
Detailed investigations of structural, magnetic and electronic transport properties of hole-doped high-entropy rare-earth manganites are presented. The high-entropy samples (LaNdPrSmEu)$_{1-x}$Sr$_x$MnO$_3$ (0$\leq$\textit{x}$\leq$0.5),…
In order to better understand the transition from quantum to classical behavior in spin system, electron magnetic resonance (EMR) is studied in suspensions of superparamagnetic magnetite nanoparticles with an average diameter of ~ 9 nm and…
The sensitivity of transport in CMR manganite to external fields is examined using a PZT-based field effect configuration with a La0.7Ca0.3MnO3 channel subjected to electric and magnetic fields, separately and in conjugation. We not only…
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered…
We present magnetic characterization of a binary rare-earth intermetallic compound Er5Si3, crystallizing in Mn5Si3-type hexagonal structure, through magnetization, heat-capacity, electrical resistivity, and magnetoresistance measurements.…
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of…
We discuss the fundamental noise limitations of a ferromagnetic torque sensor based on a levitated magnet in the tipping regime. We evaluate the optimal magnetic field resolution taking into account the thermomechanical noise and the…
The surface of a topological insulator hosts a very special form of a quasi-two dimensional metallic system when it is embedded in a topologically trivial medium like the vacuum. The electronic properties of this unusual 2D metal are…
Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI$_3$ by exploiting the…
The localized f-electrons enrich the magnetic properties in rare-earth-based intermetallics. Among those, compounds with heavier 4d and 5d transition metals are even more fascinating because anomalous electronic properties may be induced by…
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…
It is found that the polycrystalline NdRu2Ge2 undergoes two successive magnetic transitions at Tt=10 K and TN=19 K. Evidence of metamagnetic transition is detected in the magnetization isotherm data in the antiferromagnetic regime.…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
We report on the noise performance characteristics of magnetic sensors using both magnetic tunnel junction (MTJ) and giant magnetoresistance (GMR) elements. Each sensor studied has a notably different noise and detectivity. Of the sensors…