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Two-dimensional electron gases (2DEGs) in SrTiO$_3$ have become model systems for engineering emergent behaviour in complex transition metal oxides. Understanding the collective interactions that enable this, however, has thus far proved…
Spatial behavior of spin transport in a Sierpinski gasket fractal is studied from two dimensions to quasi-one dimension subject to the Rashba spin-orbital coupling. With two normal metal leads represented by self-energy matrix, discretizing…
We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to…
Vanadium oxides are strongly correlated materials which display metal-insulator transitions as well as various structural and magnetic properties that depend heavily on oxygen stoichiometry. Therefore, it is crucial to precisely control…
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like…
Electronic properties of low dimensional superconductors are determined by many-body-effects. This physics has been studied traditionally with superconducting thin films, and in recent times with two-dimensional electron gases (2DEGs) at…
After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3 system, the recent discovery of a superconducting two-dimensional electron gases (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the…
We demonstrate that the electronic properties of epitaxial SmN thin films can be effectively tuned during growth by controlling the synthesis parameters. By carefully adjusting these parameters, we are able to drive SmN from an insulating…
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here…
Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of…
The mobility of surface electrons localized over helium films underlying solid substrates has been evaluated by solving the Boltzmann equation in the time relaxation approximation and the force balance equation in which an effective…
We study the superconducting properties of a two-dimensional superconductor in the proximity to an electronic topological transition (ETT). In contrast to the 3D case, we find that the superconducting gap at T=0, the critical temperature…
We have measured the low-field magnetoresistances (MRs) of a series of Sn-doped indium oxide thick films in the temperature $T$ range 4--35 K. The electron dephasing rate $1/\tau_{\varphi}$ as a function of $T$ for each film was extracted…
Magneto-transport properties of (111)-oriented single-crystal thin films of SnTe were investigated. SnTe (111) thin films were epitaxially grown on a BaF2 substrate by molecular beam epitaxy. By optimizing the growth conditions and the…
Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…
Ion implantation is a powerful approach for tuning the electrical properties of materials through controlled doping and defect engineering, with applications in thermoelectrics and microelectronics. Scandium nitride (ScN) is particularly…
A scattering mechanism stemming from the Stark-shift of energy levels by electric fields in semiconductor quantum wells is identified. This scattering mechanism feeds off interface roughness and electric fields, and modifies the well known…
We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van…
Titanium nitride (TiN) presents superior electrical conductivity with mechanical and chemical stability and compatibility with the semiconductor fabrication process. Here, we fabricated epitaxial and polycrystalline TiN (111) thin films on…
Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices…