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Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically…
Nonlinear frequency conversion is ubiquitous in laser engineering and quantum information technology. A long-standing goal in photonics is to integrate on-chip semiconductor laser sources with nonlinear optical components. Engineering…
We study the collective excitations and inelastic light scattering cross-section of an electron gas confined in a GaAs/AlGaAs coaxial quantum well. These system can be engineered in a core-multi-shell nanowire and inherit the hexagonal…
Periodic incorporation of quantum wells inside a one--dimensional Bragg structure is shown to enhance coherent coupling of excitons to the electromagnetic Bloch waves. We demonstrate strong coupling of quantum well excitons to photonic…
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D…
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are…
Solids with spatially varying photonic structure offer gaps to light of a wider range of frequencies than do simple photonic systems. We solve numerically the field distribution in a solid cholesteric with a linearly varying inverse pitch…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were…
Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly…
We report the design, nanofabrication, and characterization of high-quality polymer-based micromirror structures employing the 3D two-photon polymerization lithography technique. Compared to conventional microcavity approaches, our…
We study radiative linewidth of exciton resonance in shallow In$_x$Ga$_{1-x}$As/GaAs single quantum wells as a function of indium concentration in the range $x=0.02...0.10$ and well thickness in the range $L_Z=1...30$ nm using the method of…
Nanostructured metal surfaces comprised of periodically arranged spherical voids are grown by electrochemical deposition through a self-assembled template. Detailed measurements of the angle- and orientation-dependent reflectivity reveal…
Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and…
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (NID) layers, provides a straightforward methodology for…
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm$^2$, 5 orders of on/off ratio, and low differential on-resistance of 2.6 m$\Omega\cdot$cm$^2$ at the…
We demonstrate a kind of grating coupler that generates high quality flat-top beam with a small beamwidth from photonic integrated circuits into free-space. The grating coupler is designed on a silicon-on-insulator wafer with a 220 nm-thick…
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from…
The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well…
Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection…