Related papers: Ion-beam Assisted Sputtering of Titanium Nitride T…
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual…
Niobium Titanium nitride (NbTiN) based superconducting nanowire single photon detectors (SNSPDs) are known for their high performance across a wide spectral range, from the X-ray to the mid-infrared. Nonetheless, fabrication challenges and…
The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…
In this work, we studied phase formation, structural and magnetic properties of iron-nitride (Fe-N) thin films deposited using high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dc-MS). The nitrogen…
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an…
To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room…
We report the development of a reactive sputtering process for high $T_\mathrm{c}$ NbN films with high normal-state resistivity, tailored for kinetic inductance parametric amplifiers. The process includes precise control to ensure full…
Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical,…
Decrease in the size of integrated circuits (IC) and metal interconnects raise resistivity due the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the…
Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics.…
Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance,…
Transition Metal Nitrides are a versatile class of materials, combining chemical robustness, high hardness, and superconducting behaviour with critical temperatures between 2 to 10 K. While several binary TMNs have been explored,…
Nickel oxide (NiO) is a binary compound with a lot of applications in the present technology. NiO thin films were deposited by reactive sputtering magnetron under several voltage biases applied in the glass substrates (0, 50, 100, 200, 300,…
We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are…
We probe the effects of strong disorder (2.4 < kFl < 8.6) on superconductivity in thin films of niobium titanium nitride and titanium nitride by measuring the microwave electrodynamics in coplanar waveguide resonators. We find a gradual…
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick…
The microstructural development in H13 tool steel upon nitriding by an ion beam process was investigated. The nitriding experiments were performed at a relatively low temperature of about 400\deg C and at constant ion beam energy (400 eV)…
Flexible NbC nanocomposite thin films with carbon content ranging from 0 to 99 at.% were deposited at room temperature on Si (100) and polystyrene substrates by non-reactive magnetron sputtering from pure Nb and C targets without applying…
Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…