Related papers: Spin Hall angle in single-layer graphene
We review the theoretical basis and understanding of electronic interactions in graphene Landau levels, in the limit of strong correlations. This limit occurs when inter-Landau-level excitations may be omitted because they belong to a…
With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
Intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low-energy electronic spectrum for states in the vicinity of the Dirac points is obtained from the corresponding $\mathbf{k}\cdot\mathbf{p}$…
Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers, and static electric or magnetic fields.…
We describe an intrinsic spin-Hall effect in $n$-type bulk zinc-blende semiconductors with topological origin. When electron transport is confined to a waveguide structure, and the applied electric field is such that the spins of electrons…
We study the electronic properties of the confined honeycomb lattice in the presence of the intrinsic spin-orbit (ISO) interaction and perpendicular magnetic field, and report on uncommon aspects of the quantum spin Hall conductance…
We apply Laughlin's gauge argument to analyze the $\nu=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the…
We study the magnetoresistance of spin-valve devices using graphene as a non-magnetic material to connect ferromagnetic leads. As a preliminary step we first study the conductivity of a graphene strip connected to metallic contacts for a…
Van der Waals heterostructures based on two-dimensional materials have recently become a very active topic of research in spintronics, both aiming at a fundamental description of spin dephasing processes in nanostructures and as a potential…
With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with…
Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regime when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the…
We use numerical simulations to predict peculiar magnetotransport fingerprints in polycrystalline graphene, driven by the presence of grain boundaries of varying size and orientation. The formation of Landau levels is shown to be restricted…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…
Based on a rigorous quantum-kinetic approach, spin-charge coupled drift-diffusion equations are derived for a strongly confined two-dimensional hole gas. An electric field leads to a coupling between the spin and charge degrees of freedom.…
We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-clean interfaces and high-mobility devices. In a perpendicular…
We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct…
We study theoretically the quantum transport properties of the Dirac fermions with spin-orbit interactions (SOIs) in graphene by using the method of Schwinger proper time together with decomposition over Landau level poles and Kubo formula.…
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-B\"uttiker and Kubo-Greenwood simulations are used to access both…