Related papers: Time-domain impedance method for transient photovo…
Counting rate is a key parameter of superconducting nanowire single photon detectors (SNSPD) and is determined by the current recovery time of an SNSPD after a detection event. We propose a new method to study the transient detection…
This work develops an analytical model to consistently interpret the steady-state and small-perturbation response (both in the time and frequency domain) of photoanodes for solar water-splitting. In addition to accounting for the…
We study the stationary surface photocurrent in 2D electron gas near the helium surface. Electron gas is assumed to be attracted to the helium surface due to the image attracting force and an external stationary electric field. The…
The conventional notion for achieving high efficiency in thermophotovoltaics (TPVs) is to use a monochromatic emission at a photon energy corresponding to the band gap of the cell. Here, we prove theoretically that such a notion is only…
A 50 min time series of one-dimensional slit-spectrograms, taken in quiet sun at disk center, observed at the German Vacuum Tower Telescope (Observatorio del Teide), was used to study the global and spatial variations of different line…
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that the electrons end up in the quantum well generating a…
Effect of ambient gases on photoluminescence (PL) and electrical conductivity of films prepared using ZnO nanoparticles (NPs) have been investigated. It is observed that NPs of size below 20 nm kept inside a chamber exhibit complete…
We investigate the potential of epitaxial (001)p-NiO/(0001)n-ZnO heterostructures grown on (0001)sapphire substrates by pulsed laser deposition technique for ultraviolet photodetector application. Our study reveals that in the self-powered…
The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we…
Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two dimensional quantum well states and topological surface states in these films are well resolved as measured by…
Luminescence spectra of NiO have been investigated under vacuum ultraviolet (VUV) and soft X-ray (XUV) excitation. Photoluminescence (PL) spectra show broad emission bands centered at about 2.3 and 3.2 eV. The PL excitation (PLE) spectral…
Photodetectors are key optoelectronic building blocks performing the essential optical-to-electrical signal conversion, and unlike solar cells, operate at a specific wavelength and at high signal or sensory speeds. Towards achieving high…
In order to achieve ultrafast response in MgZnO based self-powered Schottky type photodetectors, it is crucial to decrease both the junction capacitance and carrier transit time. To meet these criteria, Au/MgZnO/ITO Schottky junction…
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transient current technique with sub-nanosecond focused light pulses…
The formation of photo-electron current in the volume of semi-conductor material is investigated in this article. A plane case when a material is uniformly illuminated by light is considered. The current-voltage characteristic of a photo…
We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We…
Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both…
Numerical simulation of switching process of high-voltage silicon photodiodes, phototransistors and photothyristors those triggered-on homogeneously over the area by picosecond laser pulses, has been performed for the first time. The…
We report an investigation on the observation of ultrahigh photoresponse (photogain, G_Pc>106) in single nanowire photodetectors of diameter < 100 nm. The investigation which is a combination of experimental observations and a theoretical…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…