Related papers: Compact Model of a Topological Transistor
A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to…
Topologically protected surface modes of classical waves hold the promise to enable a variety of applications ranging from robust transport of energy to reliable information processing networks. The integer quantum Hall effect has delivered…
We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological Insulator (TI). Chiral tunneling across a TI pn junction allows normally…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a…
We study a junction of a topological insulator with a thin two-dimensional (2D) non-magnetic or partially polarized ferromagnetic metallic film deposited on a 3D insulator. We show that such a junction leads to a finite spin current…
Topological insulators (TIs) are a novel class of materials with nontrivial surface or edge states. Time-reversal symmetry (TRS) protected TIs are characterized by the Z2 topological invariant and their helical property becomes lost in an…
We present a compact model for Tunnel Field Effect Transistors (TFET), that captures sev- eral non-idealities such as the Trap Assisted Tunneling (TAT) originating from interface traps (Dit), along with Verilog-A implementation. We show…
Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely…
The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum physics in the past decade. Compared with the uniform films,…
The possibility of realizing topological insulators by spontaneous formation of electronic superstructure is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a…
In this work, we predict a hinged quantum spin-Hall (HQSH) effect featured by a pair of helical hinge modes in antiferromagnetic (AFM) topological insulator (TI) multilayers. This pair of helical hinge modes are localized on the hinges of…
A macroscopic spintronic qubit based on spin superfluidity and spin Hall phenomena is proposed. This magnetic quantum information processing device realizes the spin-supercurrent analog of the superconducting phase qubit and allows for full…
Motivated by recent experiments, we investigate the quantum spin Hall state in 2D topological insulator/ferromagnetic metal planar junctions by means of a tight-binding model and linear response theory. We demonstrate that whether the edge…
Detection and manipulation of electrons' spins are key prerequisites for spin-based electronics or spintronics. This is usually achieved by contacting ferromagnets with metals or semiconductors, in which the relaxation of spins due to…
The recently discovered material Co$_3$Sn$_2$S$_2$ shows an impressive behavior of the quantum anomalous Hall (QAH) conductivity driven by the interplay between ferromagnetism in the $z$ direction and antiferromagnetism in the $xy$ plane.…
A quantum spin hall insulator(QSHI) is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T'-WTe2 exhibits this quantized edge conductance in transport…
The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals…
We investigate the magnetization dynamics of a pair of ferromagnetic insulators (FMIs) deposited on the surface of a topological insulator (TI). Due to the nonlinear nature of the underlying physics and intrinsic dynamics, the FMIs can…
Motivated by the topologically insulating (TI) circuit of capacitors and inductors proposed and tested in arXiv:1309.0878, we present a related circuit with less elements per site. The normal mode frequency matrix of our circuit is…
Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the…