Related papers: X-ray performance of a customized large-format sci…

The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in…

The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…

Complimentary metal-oxide-semiconductor (CMOS) compatible quantum technology enables scalable integration with the classical readout and control electronics needed to build quantum computers. Homodyne detectors have applications across…

MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…

CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the…

Using 2.0 cm x 2.0 cm x 0.5 cm Cadmium Telluride (CdTe) substrates from the company Acrorad, we have fabricated detectors with planar cathode contacts and 8x8 anode pixels. We investigate the I-V characteristics and energy resolution of the…

We evaluate the performances of a 100 um-thick silicon strip detector (SSD) with a 300 MeV proton beam and a 90Sr beta-ray source. Signals from the SSD have been read out using a VLSI chip. Common-mode noise, signal separation efficiency…

CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…

Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen…

The precise measurement of a target depth has applications in biophysics and nanophysics, and non-linear optical methods are sensitive to intensity changes on very small length scales. By exploiting the high sensitivity of an…

Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to…

Current video-based computer vision (CV) applications typically suffer from high energy consumption due to reading and processing all pixels in a frame, regardless of their significance. While previous works have attempted to reduce this…

The Dark matter Nanosatellite Equipped with Skipper Sensors (DarkNESS) mission is a 6U CubeSat designed to search for X-ray lines from decaying dark matter using Skipper-CCDs. Thick, fully-depleted p-channel Skipper-CCDs provide low readout…

In the last years, optical readout of Micromegas gaseous detectors has been achieved by implementing a Micromegas detector on a glass anode coupled to a CMOS camera. Effective X-ray radiography was demonstrated using integrated imaging…

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…

FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1--80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager…

Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working…

Complementary-metal-oxide-semiconductor (CMOS) is the most widely spread technology for integrated circuits fabrication. Each foundry offers different technology nodes that are characterized by the minimum feature size, which is the…

We report the first results from an X-ray polarimeter with a micropattern gas proportional counter using an amorphous silicon active matrix readout. With 100% polarized X-rays at 4.5 keV, we obtain a modulation factor of 0.33 +/- 0.03,…

We have developed a non-destructive readout system that uses a floating-gate amplifier on a thick, fully depleted charge coupled device (CCD) to achieve ultra-low readout noise of 0.068 e- rms/pix. This is the first time that discrete…