Related papers: Switching Rashba spin-splitting by reversing elect…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…
We demonstrate how the Rashba spin-orbit coupling in semiconductor heterostructures can produce and control a spin-polarized current without ferromagnetic leads. Key idea is to use spin-double refraction of an electronic beam with a nonzero…
Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic…
Inefficient screening of electric fields in nanoconductors makes electric manipulation of electronic transport in nanodevices possible. Accordingly, electrostatic (charge) gating is routinely used to affect and control the Coulomb…
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal…
Spin-orbit coupling (SOC) in conjunction with broken inversion symmetry acts as a key ingredient for several intriguing quantum phenomena viz. persistent spin textures, topological surface states and Rashba-Dresselhaus (RD) effects. The…
We investigate the spin-resolved transport in a two-terminal zigzag graphene nanoribbon device with two independent gate induced Rashba spin-orbit coupling regions and in the presence of strain. By employing a recursive Green's function…
Here, we report a novel AuSb 2D superstructure on Au(111) that shows agreements and discrepancies to the expected electronic features of the ideal 2D surface alloys with $\sqrt{3}\times\sqrt{3}$ periodicity. Using spin- and angle-resolved…
We propose that the hybridization between two sets of Rashba bands can lead to an unconventional topology where the two Fermi circles from different bands own in-plane helical spin textures with the same chiralities, and possess group…
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…
A Rashba nanowire is subjected to a magnetic field that assumes opposite signs in two sections of the nanowire, and, thus, creates a magnetic domain wall. The direction of magnetic field is chosen to be perpendicular to the Rashba…
In this letter, we investigated the Rashba effect of the CsPbBr$_3$ bilayers under the external electric field (EEF), with the first-principles calculations. For the PbBr$_2$ terminated bilayer, we found that only electrons experience the…
The spin transport characteristics of a nanowire directional electronic coupler have been evaluated theoretically via a transfer matrix approach. The application of a gate field in the region of mixing allows for control of spin current…
At interfaces with inversion symmetry breaking, Rashba effect couples the motion of electrons to their spin; as a result, spin-charge interconversion mechanism can occur. These interconversion mechanisms commonly exploit Rashba spin…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…
Strained graphene with lattice deformations has been demonstrated to give rise to large pseudomagnetic fields and host many exotic properties. Here, we propose a non-magnetic approach to realize a momentum-dependent out-of-plane spin…
We propose a fast and accurate spin initialization method for a single electron trapped in an electrostatic quantum dot. The dot is created in a nanodevice composed of a catalytically grown indium antimonide (InSb) nanowire and nearby gates…
The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba…
The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or…