Related papers: A drop model of integer and fractional quantum Hal…
Up to almost the last two decades all the experimental results concerning the quantum Hall effect (QHE), i.e., the observation of plateaux at integer (IQHE) or fractional (FQHE) values of the constant h/e2, were related to quantum-wells in…
The fractional quantum Hall (FQH) effect arises from strong electron correlations in a quantising magnetic field, and features exotic emergent phenomena such as electron fractionalisation. Using the diagrammatic Monte Carlo approach with…
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do…
There are compelling reasons to seek a new coherent description of the Quantum Hall Effects (QHE). The theories of the `Integer' (IQHE) and the `Fractional' (FQHE) quantum Hall effects are very different at present, despite their remarkable…
We consider the fractal characteristic of the quantum mechanical paths and we obtain for any universal class of fractons labeled by the Hausdorff dimension defined within the interval 1$ $$ < $$ $$h$$ $$ <$$ $$ 2$, a fractal distribution…
Up to know all the experimental results concerning the integer and fractional quantum Hall effect are related to semiconductor heterostructures (and more recently with graphene). The common characteristic of all these systems is the…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
We present a theoretical framework to describe the integer quantum Hall effect (IQHE) in three-dimensional (3D) electron systems. This extends our previous single-electron approach, which was successfully applied to two-dimensional (2D)…
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for…
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…
The observation of the fractional quantum Hall (FQH) effect in 2D electron gases ushered in investigations of topological phases driven by strong electron correlations. Their remarkable features include fractionalized elementary…
In a twisted graphene on hexagonal Boron Nitride, the presence of a gap and the breaking of the symmetry between carbon sublattices leads to multicomponent fractional quantum Hall effect (FQHE) due to the electrons correlation. We report on…
The present theory has investigated the FQHE without any quasi-particle. The electric field due to the Hall voltage is taken into consideration. We find the ground state where the electron configuration is uniquely determined so as to have…
Motivated by two independent experiments revealing a resistance minimum at the Landau level (LL) filling factor $\nu=2+4/9$, characteristic of the fractional quantum Hall effect (FQHE) and suggesting electron condensation into a yet unknown…
A many-particle Hamiltonian is proposed in order to explain the fractional quantum Hall effect (FQHE) for fractional filling factors $\nu < 1$. The solutions of the corresponding Hartree-Fock equations make it possible to discuss the FQHE…
We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and…
We present a different approach to the fractional quantum Hall effect (FQHE), focusing it as a consequence of the change in the symmetry of the Hamiltonian of every electron in a two-dimensional electron gas (2DEG) under the application of…
Integer and fractional quantum Hall effects were studied with different physics models and explained by different physical mechanisms. In this paper, the common physical mechanism for integer and fractional quantum Hall effects is studied,…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
A large class of fractional quantum Hall (FQH) states can be classified according to their pattern of zeros, which describes the order of zeros in ground state wave functions as various clusters of electrons are brought together. The…