Related papers: Compact modeling technology for the simulation of …

We investigate a plasmonic electro-optic modulator with an extinction ratio exceeding 1 dB/um by engineering the optical mode to be in-plane with the graphene layer, and show how lowering the operating temperature enables steeper switching.…

The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…

Typical geomagnetically induced current (GIC) modelling assumes the induced quasi-DC current at a node in the transmission network is linearly related to the local geoelectric field by a pair of network parameters. Given a limited…

The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…

Graphene Field-Effect Transistors (GFETs) are increasingly employed as biochemical sensors due to their exceptional electronic properties, surface sensitivity, and potential for miniaturization. A critical challenge in deploying GFETs is…

Scalable solid-state quantum computers will require integration with analog and digital electronics. Efficiently simulating the quantum-classical electronic interface is hence of paramount importance. Here, we present Verilog-A compact…

A physics-based compact model for silicon gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) with good accuracy has been developed by considering Phonon-Assisted Tunneling (PAT) and transition from Quantum Capacitance Limit (QCL) to…

Modular multilevel converter (MMC) has complex topology, control architecture and broadband harmonic spectrum. For this, linear-time-periodic (LTP) theory, covering multi-harmonic coupling relations, has been adopted for MMC impedance…

We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n…

As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…

We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak…

A finite element model and its equivalent electronic analogue circuit of hydraulic transmission lines have been developed. Basic equations are approximated to be a set of ordinary differential equations that can be represented in state…

An accurate and fast method is presented for scattering of electromagnetic waves from an array of time-modulated graphene ribbons. We derive a time-domain integral equation for induced surface currents under subwavelength approximation.…

The Finite Element Method (FEM) is a powerful modeling tool for predicting the behavior of soft robots. However, its use for control can be difficult for non-specialists of numerical computation: it requires an optimization of the…

An innovative and accurate dynamic Compact Thermal Model extraction method is proposed for multi-chip power electronics systems. It accounts for thermal coupling between multiple heat sources. Transient electro-thermal coupling can easily…

The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance…

In this work, we present a parallel, fully-distributed finite element numerical framework to simulate the low-frequency electromagnetic response of superconducting devices, which allows to efficiently exploit HPC platforms. We select the…

We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…

The concept, analysis, and design of series switches for graphene-strip plasmonic waveguides at near infrared frequencies are presented. Switching is achieved by using graphene's field effect to selectively enable or forbid propagation on a…

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation…