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Related papers: Switchable tribology of ferroelectrics

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Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…

Mesoscale and Nanoscale Physics · Physics 2022-10-07 Laurent Molino , Leena Aggarwal , Vladimir Enaldiev , Ryan Plumadore , Vladimir Falko , Adina Luican-Mayer

Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

Materials Science · Physics 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…

Mesoscale and Nanoscale Physics · Physics 2011-10-07 H. Lu , C. -W. Bark , D. Esque de los Ojos , J. Alcala , C. -B. Eom , G. Catalan , A. Gruverman

Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…

Materials Science · Physics 2025-10-29 J. Schultheiß , G. Picht , J. Wang , Y. A. Genenko , L. Q. Chen , J. E. Daniels , J. Koruza

Domain boundaries in ferroelectric materials exhibit rich and diverse physical properties distinct from their parent materials and have been proposed for novel applications in nanoelectronics and quantum information technology. Due to their…

Mesoscale and Nanoscale Physics · Physics 2021-09-14 Fan Zhang , Zhe Wang , Lixuan Liu , Anmin Nie , Yongji Gong , Wenguang Zhu , Chenggang Tao

The possibility of controlling the domain structure in spherical nanoparticles of uniaxial and multiaxial ferroelectrics using a shell with tunable dielectric properties is studied in the framework of Landau-Ginzburg-Devonshire theory.…

Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…

Materials Science · Physics 2025-08-01 Fernando Gómez-Ortiz , Louis Bastogne , He Xu , Philippe Ghosez

The wealth of complex polar topologies recently found in nanoscale ferroelectrics result from a delicate balance between the materials intrinsic tendency to develop a homogeneous polarization and the electric and mechanic boundary…

The switching of electric polarization induced by electric fields -a fundamental functionality of ferroelectrics- is closely associated with the motions of the domain walls that separate regions with distinct polarization directions.…

Materials Science · Physics 2014-01-10 F. Kagawa , S. Horiuchi , N. Minami , S. Ishibashi , K. Kobayashi , R. Kumai , Y. Murakami , Y. Tokura

Heterostructured material systems devoid of ferroic components are presumed not to display ordering associated with ferroelectricity. In heterostructures composed of transition metal oxides, however, the disruption introduced by an…

Strongly Correlated Electrons · Physics 2012-09-25 K. Rogdakis , J. W. Seo , Z. Viskadourakis , Y. Wang , L. F. N. Ah Qune , E. Choi , J. D. Burton , E. Y. Tsymbal , J. Lee , C. Panagopoulos

Ferroelectric materials exhibit a switchable, spontaneous polarization at the unit cell level--an attractive property utilized in many emerging technologies including, among others, high-density memory storage, low-power transistors, and…

Materials Science · Physics 2026-01-15 Claire Griesbach , Tizian Scharsach , Morgan Trassin , Dennis M. Kochmann

Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…

Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…

Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…

Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…

Materials Science · Physics 2025-06-02 Kamyar Barakati , Yu Liu , Hiroshi Funakubo , Sergei V. Kalinin

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical…

Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied…

Materials Science · Physics 2022-06-27 Yuri A. Genenko , Sergey Zhukov , Maohua Zhang , Ke Wang , Jurij Koruza

Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…

Materials Science · Physics 2021-03-22 Jun Chen , Shuai Dong

Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit…

Materials Science · Physics 2023-09-29 Guoliang Yu , Chuhan Tang , Zhiqiang Tian , Ziming Zhu , Anlian Pan , Mingxing Chen , Xing-Qiu Chen
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