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Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is…

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…

Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…

Embedded Field-Programmable Gate Arrays (eFPGAs) allow for the design of hardware accelerators of edge Machine Learning (ML) applications at a lower power budget compared with traditional FPGA platforms. However, the limited eFPGA logic and…

Simulated annealing (SA) is a well-known algorithm for solving combinatorial optimization problems. However, the computation time of SA increases rapidly, as the size of the problem grows. Recently, a stochastic simulated annealing (SSA)…

Recurrent Neural Networks (RNNs) are becoming increasingly important for time series-related applications which require efficient and real-time implementations. The two major types are Long Short-Term Memory (LSTM) and Gated Recurrent Unit…

Photonic in-memory computing is a high-speed, low-energy alternative to traditional transistor-based digital computing that utilizes high photonic operating frequencies and bandwidths. In this work, we develop a comprehensive system-level…

Various hardware accelerators have been developed for energy-efficient and real-time inference of neural networks on edge devices. However, most training is done on high-performance GPUs or servers, and the huge memory and computing costs…

The configurable building blocks of current FPGAs -- Logic blocks (LBs), Digital Signal Processing (DSP) slices, and Block RAMs (BRAMs) -- make them efficient hardware accelerators for the rapid-changing world of Deep Learning (DL).…

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…

One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by…

The current state of the art of Simultaneous Localisation and Mapping, or SLAM, on low power embedded systems is about sparse localisation and mapping with low resolution results in the name of efficiency. Meanwhile, research in this field…

Herein, a bit-wise Convolutional Neural Network (CNN) in-memory accelerator is implemented using Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) computational sub-arrays. It utilizes a novel AND-Accumulation method capable of…

This paper reviews memory technologies used in Field-Programmable Gate Arrays (FPGAs) for neuromorphic computing, a brain-inspired approach transforming artificial intelligence with improved efficiency and performance. It focuses on the…

Accelerators for sparse matrix multiplication are important components in emerging systems. In this paper, we study the main challenges of accelerating Sparse Matrix Multiplication (SpMM). For the situations that data is not stored in the…

Efficient signal detectors are rather important yet challenging to achieve satisfactory performance for large-scale communication systems. This paper considers a non-orthogonal sparse code multiple access (SCMA) configuration for…

Field Programmable Gate Arrays generate algorithmic specific architectures that improve the code's FLOP per watt ratio. Such devices are re-gaining interest due to the rise of new tools that facilitate their programming, such as OmpSs. The…

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding…

Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…