Related papers: Performance Modeling Sparse MTTKRP Using Optical S…

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

Battery-less technology evolved to replace battery usage in space, deep mines, and other environments to reduce cost and pollution. Non-volatile memory (NVM) based processors were explored for saving the system state during a power failure.…

Neural rendering has gained prominence for its high-quality output, which is crucial for AR/VR applications. However, its large voxel grid data size and irregular access patterns challenge real-time processing on edge devices. While…

The matricized-tensor times Khatri-Rao product (MTTKRP) is the computational bottleneck for algorithms computing CP decompositions of tensors. In this paper, we develop shared-memory parallel algorithms for MTTKRP involving dense tensors.…

We present a new data structure called the \emph{Compressed Random Access Memory} (CRAM) that can store a dynamic string $T$ of characters, e.g., representing the memory of a computer, in compressed form while achieving asymptotically…

Custom memory organization are challenging task in the area of VLSI design. This study aims to design high speed and low power consumption memory for embedded system. Synchronous SRAM has been proposed and analyzed using various simulators.…

Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…

As an emerging post-CMOS Field Effect Transistor, Magneto-Electric FETs (MEFETs) offer compelling design characteristics for logic and memory applications, such as high-speed switching, low power consumption, and non-volatility. In this…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

In this paper, we demonstrate the design of efficient and high-performance AI/Deep Learning accelerators with customized STT-MRAM and a reconfigurable core. Based on model-driven detailed design space exploration, we present the design…

Matricized Tensor Times Khatri-Rao Product (MTTKRP) is the computational bottleneck in sparse tensor decomposition. As real-world sparse tensors grow to billions of nonzeros, they increasingly demand higher memory capacity and compute…

Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…

Simultaneous Localization And Mapping (SLAM) is the problem of constructing or updating a map of an unknown environment while simultaneously keeping track of an agent's location within it. How to enable SLAM robustly and durably on mobile,…

Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…

To make a useful STT-MRAM (spin-transfer torque magnetoresistive random-access memory) device, it is necessary to be able to calculate switching rates, which determine the error rates of the device. In a single-macrospin model, one can use…

There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…

Long Short-Term Memory (LSTM) is widely used in speech recognition. In order to achieve higher prediction accuracy, machine learning scientists have built larger and larger models. Such large model is both computation intensive and memory…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

Simultaneous Localization and Mapping (SLAM) estimates agents' trajectories and constructs maps, and localization is a fundamental kernel in autonomous machines at all computing scales, from drones, AR, VR to self-driving cars. In this…